-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
81AC2789
|
Newark | Mosfet, P-Ch, -30V, -60A, 150Deg C, Transistor Polarity:P Channel, Continuous Drain Current Id:-60A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.0038Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.3V, Power Rohs Compliant: Yes |Vishay SIR165DP-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 11523 |
|
$1.1800 / $1.7600 | Buy Now |
DISTI #
81AC3481
|
Newark | P-Channel 30-V (D-S) Mosfet |Vishay SIR165DP-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6290 / $0.6430 | Buy Now |
DISTI #
SIR165DP-T1-GE3
|
Avnet Americas | Transistor MOSFET P-CH 30V 60A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR165DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.6379 / $0.8103 | Buy Now |
DISTI #
78-SIR165DP-T1-GE3
|
Mouser Electronics | MOSFET -30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 27989 |
|
$0.5910 / $1.5700 | Buy Now |
|
Future Electronics | Single P-Channel 30 V 4.6 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.5950 / $0.6200 | Buy Now |
|
Bristol Electronics | 284 |
|
RFQ | ||
DISTI #
SIR165DP-T1-GE3
|
TTI | MOSFET -30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 18000 In Stock |
|
$0.5910 / $0.6240 | Buy Now |
DISTI #
SIR165DP-T1-GE3
|
TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -30V, -60A, Idm: -120A Min Qty: 3000 | 0 |
|
$0.8900 | RFQ |
DISTI #
SIR165DP-T1-GE3
|
EBV Elektronik | Transistor MOSFET P-CH 30V 60A 8-Pin PowerPAK SO (Alt: SIR165DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
LCSC | PowerPAKSO-8 MOSFETs ROHS | 9 |
|
$1.9263 / $2.0316 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SIR165DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIR165DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SOP-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0046 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 516 pF | |
JESD-30 Code | R-PDSO-F5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 65.8 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 106 ns | |
Turn-on Time-Max (ton) | 90 ns |