Datasheets
SIR165DP-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SIR165DP-T1-GE3 by Vishay Intertechnologies

Overview of SIR165DP-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SIR165DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 81AC2789
Newark Mosfet, P-Ch, -30V, -60A, 150Deg C, Transistor Polarity:P Channel, Continuous Drain Current Id:-60A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.0038Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.3V, Power Rohs Compliant: Yes |Vishay SIR165DP-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 11523
  • 1 $1.7600
  • 10 $1.4700
  • 25 $1.3700
  • 50 $1.2700
  • 100 $1.1800
$1.1800 / $1.7600 Buy Now
DISTI # 81AC3481
Newark P-Channel 30-V (D-S) Mosfet |Vishay SIR165DP-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.6430
  • 10,000 $0.6290
$0.6290 / $0.6430 Buy Now
DISTI # SIR165DP-T1-GE3
Avnet Americas Transistor MOSFET P-CH 30V 60A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR165DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.8103
  • 12,000 $0.7843
  • 18,000 $0.7584
  • 30,000 $0.7277
  • 60,000 $0.7040
  • 300,000 $0.6710
  • 600,000 $0.6379
$0.6379 / $0.8103 Buy Now
DISTI # 78-SIR165DP-T1-GE3
Mouser Electronics MOSFET -30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 27989
  • 1 $1.5700
  • 10 $1.2900
  • 100 $1.0100
  • 500 $0.8500
  • 1,000 $0.6920
  • 3,000 $0.6350
  • 6,000 $0.6080
  • 9,000 $0.5910
$0.5910 / $1.5700 Buy Now
Future Electronics Single P-Channel 30 V 4.6 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.6200
  • 6,000 $0.5950
$0.5950 / $0.6200 Buy Now
Bristol Electronics   284
RFQ
DISTI # SIR165DP-T1-GE3
TTI MOSFET -30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 18000
In Stock
  • 3,000 $0.6240
  • 6,000 $0.6040
  • 9,000 $0.5910
$0.5910 / $0.6240 Buy Now
DISTI # SIR165DP-T1-GE3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -30V, -60A, Idm: -120A Min Qty: 3000 0
  • 3,000 $0.8900
$0.8900 RFQ
DISTI # SIR165DP-T1-GE3
EBV Elektronik Transistor MOSFET P-CH 30V 60A 8-Pin PowerPAK SO (Alt: SIR165DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC PowerPAKSO-8 MOSFETs ROHS 9
  • 1 $2.0316
  • 10 $1.9863
  • 30 $1.9571
  • 100 $1.9263
$1.9263 / $2.0316 Buy Now

Part Details for SIR165DP-T1-GE3

SIR165DP-T1-GE3 CAD Models

SIR165DP-T1-GE3 Part Data Attributes:

SIR165DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR165DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 516 pF
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 65.8 W
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 106 ns
Turn-on Time-Max (ton) 90 ns

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