Part Details for SIR164DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR164DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIR164DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
15R4876
|
Newark | Mosfet Transistor, N Channel, 50 A, 30 V, 2.05 Mohm, 10 V, 1.2 V |Vishay SIR164DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.5590 / $0.6600 | Buy Now |
|
DISTI #
SIR164DP-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR164DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.5670 / $0.7203 | Buy Now |
|
DISTI #
781-SIR164DP-GE3
|
Mouser Electronics | MOSFET 30V 50A 69W 2.5mohm @ 10V RoHS: Compliant | 4772 |
|
$0.5250 / $1.4000 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.5300 / $0.5500 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.5300 / $0.5500 | Buy Now |
|
|
Bristol Electronics | 78 |
|
RFQ | ||
|
|
Bristol Electronics | 6765 |
|
RFQ | ||
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 33.3A I(D), 30V, 0.0025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 5412 |
|
$0.5907 / $1.9690 | Buy Now |
|
DISTI #
SIR164DP-T1-GE3
|
TTI | MOSFET 30V 50A 69W 2.5mohm @ 10V pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.5250 / $0.5540 | Buy Now |
|
DISTI #
SIR164DP-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 50A, Idm: 70A, 69W Min Qty: 3000 | 0 |
|
$0.8900 | RFQ |
Part Details for SIR164DP-T1-GE3
SIR164DP-T1-GE3 CAD Models
SIR164DP-T1-GE3 Part Data Attributes:
|
|
SIR164DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIR164DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 33.3 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIR164DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR164DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR164DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIRA12DP-T1-GE3 | Power Field-Effect Transistor, 25A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SIR164DP-T1-GE3 vs SIRA12DP-T1-GE3 |
| SIRA12DP-T1-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIR164DP-T1-GE3 vs SIRA12DP-T1-GE3 |
| SIR418DP-T1-GE3 | Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | SIR164DP-T1-GE3 vs SIR418DP-T1-GE3 |