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Part Details for SIR158DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR158DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for SIR158DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
15AC8639
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Newark | Mosfet, N-Ch, 30V, 60A, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.00145Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Vishay SIR158DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6542 |
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$1.3300 / $2.0700 | Buy Now |
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DISTI #
15R4875
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIR158DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.7810 / $0.9340 | Buy Now |
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DISTI #
70AC6479
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Newark | Mosfet, N-Ch, 30V, 60A, Powerpak So, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:60A, On Resistance Rds(On):0.00145Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay SIR158DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.1800 | Buy Now |
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DISTI #
SIR158DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR158DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.8235 / $1.0461 | Buy Now |
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DISTI #
781-SIR158DP-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 14950 |
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$0.7550 / $1.8200 | Buy Now |
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Future Electronics | Single N-Channel 30 V 60 A 83 W 1.8 mOhm Power Mosfet - PowerPak-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 9000Reel |
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$0.7350 / $0.7650 | Buy Now |
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Future Electronics | Single N-Channel 30 V 60 A 83 W 1.8 mOhm Power Mosfet - PowerPak-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.7350 / $0.7650 | Buy Now |
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Bristol Electronics | 1750 |
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RFQ | ||
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Bristol Electronics | 1498 |
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RFQ | ||
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Quest Components | 464 |
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$0.9583 / $2.0720 | Buy Now |
Part Details for SIR158DP-T1-GE3
SIR158DP-T1-GE3 CAD Models
SIR158DP-T1-GE3 Part Data Attributes:
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SIR158DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR158DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |