Part Details for SIJH800E-T1-GE3 by Vishay Intertechnologies
Overview of SIJH800E-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIJH800E-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
87AJ3388
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Newark | N-Channel 80-V (D-S) 175C Mosfet Rohs Compliant: Yes |Vishay SIJH800E-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 42 |
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$1.9400 | Buy Now |
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DISTI #
SIJH800E-T1-GE3
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Avnet Americas | N-CHANNEL 80-V (D-S) 175C MOSFET - Tape and Reel (Alt: SIJH800E-T1-GE3) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 22 Weeks, 0 Days Container: Reel | 4000 |
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$1.6446 | Buy Now |
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DISTI #
87AJ3388
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Avnet Americas | N-CHANNEL 80-V (D-S) 175C MOSFET - Bulk (Alt: 87AJ3388) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 42 Partner Stock |
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$3.1700 / $4.6600 | Buy Now |
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DISTI #
625-SIJH800E-T1-GE3
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Mouser Electronics | MOSFETs POWRPK N CHAN 80V RoHS: Compliant | 4334 |
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$2.1700 / $4.8200 | Buy Now |
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DISTI #
E02:0323_17933745
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Arrow Electronics | Trans MOSFET N-CH 80V 29A 5-Pin(4+Tab) PowerPAK T/R RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 78 Weeks Date Code: 2413 | Europe - 2000 |
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$2.1534 | Buy Now |
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Future Electronics | SIJH800E Series 80 V 29 A 1.55 mOhm Single N-Channel MOSFET - PowerPAK 8 x 8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 22 Weeks Container: Reel | 0Reel |
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$2.1100 | Buy Now |
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Bristol Electronics | 2000 |
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RFQ | ||
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DISTI #
SIJH800E-T1-GE3
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TTI | MOSFETs POWRPK N CHAN 80V RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Americas - 2000 In Stock |
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$2.1500 | Buy Now |
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DISTI #
SIJH800E-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 299A, Idm: 350A Min Qty: 2000 | 0 |
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$3.1000 | RFQ |
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DISTI #
SIJH800E-T1-GE3
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Avnet Asia | N-CHANNEL 80-V (D-S) 175C MOSFET (Alt: SIJH800E-T1-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days | 4000 |
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RFQ |
Part Details for SIJH800E-T1-GE3
SIJH800E-T1-GE3 CAD Models
SIJH800E-T1-GE3 Part Data Attributes
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SIJH800E-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIJH800E-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 245 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 299 A | |
| Drain-source On Resistance-Max | 0.0018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 34 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 333 W | |
| Pulsed Drain Current-Max (IDM) | 350 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 120 ns | |
| Turn-on Time-Max (ton) | 75 ns |