Part Details for SIJH5800E-T1-GE3 by Vishay Intertechnologies
Results Overview of SIJH5800E-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SIJH5800E-T1-GE3 Information
SIJH5800E-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIJH5800E-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80AK5268
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Newark | Mosfet, N-Ch, 80V, 302A, Powerpak 8 X 8L Rohs Compliant: Yes |Vishay SIJH5800E-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 50 |
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$4.4000 / $7.6000 | Buy Now |
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DISTI #
SIJH5800E-T1-GE3
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Avnet Americas | N-CHANNEL 80-V (D-S) 175C MOSFET - Tape and Reel (Alt: SIJH5800E-T1-GE3) Min Qty: 2000 Package Multiple: 2000 Lead time: 29 Weeks, 0 Days Container: Reel |
2000 |
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$2.3509 | Buy Now |
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DISTI #
78-SIJH5800E-T1-GE3
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Mouser Electronics | MOSFETs N-Channel 80 V (D-S) 175C MOSFET, 1.35 mO 10V 1.58 mO 7.5V RoHS: Compliant | 3448 |
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$2.9300 / $5.7200 | Buy Now |
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DISTI #
V72:2272_27047313
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Arrow Electronics | Trans MOSFET N-CH 80V 30A T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Container: Cut Strips | Americas - 35 |
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$2.7640 / $2.7780 | Buy Now |
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DISTI #
69142974
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Verical | Trans MOSFET N-CH 80V 30A T/R RoHS: Compliant Min Qty: 3 Package Multiple: 1 | Americas - 35 |
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$2.7640 / $2.7780 | Buy Now |
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DISTI #
SIJH5800E-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 302A, Idm: 500A Min Qty: 2000 | 0 |
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$4.3300 | RFQ |
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DISTI #
SIJH5800E-T1-GE3
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EBV Elektronik | NCHANNEL 80V DS 175C MOSFET (Alt: SIJH5800E-T1-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 29 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIJH5800E-T1-GE3
SIJH5800E-T1-GE3 CAD Models
SIJH5800E-T1-GE3 Part Data Attributes
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SIJH5800E-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIJH5800E-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 302A I(D), 80V, 0.00158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 29 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 281 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 302 A | |
| Drain-source On Resistance-Max | 0.00158 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 20 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 333 W | |
| Pulsed Drain Current-Max (IDM) | 500 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 160 ns | |
| Turn-on Time-Max (ton) | 110 ns |