Part Details for SIHP38N60EF-GE3 by Vishay Intertechnologies
Results Overview of SIHP38N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SIHP38N60EF-GE3 Information
SIHP38N60EF-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHP38N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AC6525
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Newark | Mosfet, N-Ch, 600V, 40A, 150Deg C, 313W, Transistor Polarity:N Channel, Continuous Drain Current I... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$7.3100 | Buy Now |
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DISTI #
SIHP38N60EF-GE3
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Avnet Americas | N-CHANNEL 600V - Tape and Reel (Alt: SIHP38N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
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$3.7200 / $3.8750 | Buy Now |
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DISTI #
78-SIHP38N60EF-GE3
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Mouser Electronics | MOSFETs 600V Vds 30V Vgs TO-220AB RoHS: Compliant | 0 |
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$3.8700 | Order Now |
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DISTI #
SIHP38N60EF-GE3
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TTI | MOSFETs 600V Vds 30V Vgs TO-220AB RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
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$3.7800 / $4.0100 | Buy Now |
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DISTI #
SIHP38N60EF-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 25A, Idm: 11A, 313W, TO220AB Min Qty: 1 | 0 |
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$6.0600 / $9.0900 | RFQ |
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DISTI #
SIHP38N60EF-GE3
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EBV Elektronik | NCHANNEL 600V (Alt: SIHP38N60EF-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHP38N60EF-GE3
SIHP38N60EF-GE3 CAD Models
SIHP38N60EF-GE3 Part Data Attributes
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SIHP38N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SIHP38N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 508 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 313 W | |
| Pulsed Drain Current-Max (IDM) | 111 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 420 ns | |
| Turn-on Time-Max (ton) | 196 ns |
SIHP38N60EF-GE3 Frequently Asked Questions (FAQ)
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The recommended gate resistor value for SIHP38N60EF-GE3 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and ringing, but may also increase the turn-on time.
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To ensure reliable operation of SIHP38N60EF-GE3 in high-temperature environments, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the MOSFET's maximum junction temperature (Tj) should not be exceeded, and the device should be derated accordingly based on the ambient temperature.
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The maximum allowed voltage for the gate-source voltage (Vgs) of SIHP38N60EF-GE3 is ±20V. Exceeding this voltage can damage the MOSFET's gate oxide and lead to premature failure.
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Yes, SIHP38N60EF-GE3 is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, the maximum switching frequency should be limited to ensure that the MOSFET's switching losses do not exceed its maximum allowed power dissipation.
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To prevent parasitic inductance and ringing in the circuit when using SIHP38N60EF-GE3, it is recommended to use a low-inductance layout, keep the gate and source leads as short as possible, and use a gate resistor and capacitor to dampen ringing. Additionally, using a MOSFET with a low output capacitance (Coss) and a low gate-drain capacitance (Cgd) can also help minimize ringing.