Datasheets
SIHL620S-GE3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for SIHL620S-GE3 by Vishay Intertechnologies

Results Overview of SIHL620S-GE3 by Vishay Intertechnologies

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SIHL620S-GE3 Information

SIHL620S-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIHL620S-GE3

Part # Distributor Description Stock Price Buy
DISTI # 42AJ0426
Newark Logic Mosfet N-Channel 200V |Vishay SIHL620S-GE3 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # SIHL620S-GE3
TME Transistor: N-MOSFET, unipolar, 200V, 3.3A, Idm: 21A, 50W Min Qty: 1 0
  • 1 $0.9300
  • 5 $0.8400
  • 25 $0.7500
  • 100 $0.6700
  • 500 $0.6300
$0.6300 / $0.9300 RFQ

Part Details for SIHL620S-GE3

SIHL620S-GE3 CAD Models

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SIHL620S-GE3 Part Data Attributes

SIHL620S-GE3 Vishay Intertechnologies
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SIHL620S-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.2 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHL620S-GE3

This table gives cross-reference parts and alternative options found for SIHL620S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHL620S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRL620STRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN SIHL620S-GE3 vs IRL620STRLPBF
Part Number Manufacturer Composite Price Description Compare
IRL620SPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, 3 PIN SIHL620S-GE3 vs IRL620SPBF
IRL620STRLPBF Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN SIHL620S-GE3 vs IRL620STRLPBF
IRL620STRLPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 SIHL620S-GE3 vs IRL620STRLPBF
IRL620S Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SIHL620S-GE3 vs IRL620S

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