Datasheets
SIHG47N60AE-GE3 by:

Power Field-Effect Transistor,

Part Details for SIHG47N60AE-GE3 by Vishay Intertechnologies

Overview of SIHG47N60AE-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SIHG47N60AE-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHG47N60AE-GE3
Avnet Americas N-CHANNEL 600V - Tape and Reel (Alt: SIHG47N60AE-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 500 $3.8963
  • 1,000 $3.8340
  • 2,000 $3.7736
  • 3,000 $3.7107
  • 4,000 $3.6671
$3.6671 / $3.8963 Buy Now
DISTI # 78-SIHG47N60AE-GE3
Mouser Electronics MOSFETs 600V Vds 30V Vgs TO-247AC RoHS: Compliant 504
  • 1 $5.5600
  • 10 $5.5400
  • 25 $3.9500
$3.9500 / $5.5600 Buy Now
DISTI # V36:1790_17597469
Arrow Electronics Trans MOSFET N-CH 600V 43A 3-Pin(3+Tab) TO-247AC RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2227 Americas - 535
  • 1 $5.0460
  • 10 $5.0010
  • 25 $3.8050
$3.8050 / $5.0460 Buy Now
Future Electronics MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks 0
  • 500 $4.1100
$4.1100 Buy Now
DISTI # 85573227
Verical Trans MOSFET N-CH 600V 43A 3-Pin(3+Tab) TO-247AC RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2227 Americas - 535
  • 2 $5.0460
$5.0460 Buy Now
DISTI # SIHG47N60AE-GE3
TTI MOSFETs 600V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube Americas - 0
  • 500 $3.9500
$3.9500 Buy Now
DISTI # SIHG47N60AE-GE3
TME Transistor: N-MOSFET, unipolar, 600V, 27A, Idm: 130A, 313W, TO247AC Min Qty: 1 0
  • 1 $9.6700
  • 5 $8.7000
  • 25 $7.6900
  • 100 $6.9100
  • 500 $6.4500
$6.4500 / $9.6700 RFQ
DISTI # SIHG47N60AE-GE3
Avnet Asia N-CHANNEL 600V (Alt: SIHG47N60AE-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days 0
  • 500 $3.7440
  • 1,000 $3.6317
  • 1,500 $3.5194
  • 2,500 $3.4070
  • 5,000 $3.2947
  • 12,500 $3.1824
  • 25,000 $3.0701
$3.0701 / $3.7440 Buy Now
DISTI # SIHG47N60AE-GE3
EBV Elektronik N-CHANNEL 600V (Alt: SIHG47N60AE-GE3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHG47N60AE-GE3

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SIHG47N60AE-GE3 Part Data Attributes

SIHG47N60AE-GE3 Vishay Intertechnologies
Buy Now Datasheet
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SIHG47N60AE-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Date Of Intro 2016-07-19
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 614 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 43 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 313 W
Pulsed Drain Current-Max (IDM) 130 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 288 ns
Turn-on Time-Max (ton) 203 ns

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