Part Details for SIHG24N65E-GE3 by Vishay Intertechnologies
Overview of SIHG24N65E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIHG24N65E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19X1939
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Newark | Power Mosfet, N Channel, 24 A, 650 V, 0.12 Ohm, 10 V, 2 V Rohs Compliant: Yes |Vishay SIHG24N65E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2548 |
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$4.2100 / $6.6400 | Buy Now |
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DISTI #
68W7049
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Newark | Mosfet, N Channel, 650V, 24A, To-247Ac-3, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:24A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SIHG24N65E-GE3 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$5.0200 | Buy Now |
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DISTI #
68W7050
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Newark | Mosfet, N Ch, 650V, 24A, To-247Ac-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:24A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SIHG24N65E-GE3 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.7800 / $3.5500 | Buy Now |
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DISTI #
SIHG24N65E-GE3
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Avnet Americas | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247AC - Tape and Reel (Alt: SIHG24N65E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$3.9897 | Buy Now |
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DISTI #
78-SIHG24N65E-GE3
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Mouser Electronics | MOSFET 650V Vds 30V Vgs TO-247AC RoHS: Compliant | 500 |
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$2.8100 / $5.8900 | Buy Now |
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Future Electronics | E-Series N-Ch 650 V 0.145 Ohm Flange Mount High Voltage Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 25 Container: Tube | 0Tube |
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$2.7800 / $3.0900 | Buy Now |
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Future Electronics | E-Series N-Ch 650 V 0.145 Ohm Flange Mount High Voltage Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 25 Container: Tube | 0Tube |
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$2.7800 / $3.0900 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 500 |
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$4.4772 / $10.9200 | Buy Now |
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Bristol Electronics | 500 |
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RFQ | ||
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Quest Components | 400 |
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$3.7836 / $6.8793 | Buy Now |
Part Details for SIHG24N65E-GE3
SIHG24N65E-GE3 CAD Models
SIHG24N65E-GE3 Part Data Attributes:
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SIHG24N65E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG24N65E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 508 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |