-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SIHG22N60AE-GE3
|
Avnet Americas | Power MOSFET N-Channel 600V 20A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG22N60AE-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.9440 / $2.4696 | Buy Now |
DISTI #
78-SIHG22N60AE-GE3
|
Mouser Electronics | MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant | 380 |
|
$1.8700 / $3.8600 | Buy Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 | 0 |
|
$1.9200 | Buy Now |
DISTI #
SIHG22N60AE-GE3
|
TTI | MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube | Americas - 0 |
|
$1.8000 / $1.9900 | Buy Now |
DISTI #
SIHG22N60AE-GE3
|
Avnet Americas | Power MOSFET N-Channel 600V 20A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG22N60AE-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.9440 / $2.4696 | Buy Now |
DISTI #
SIHG22N60AE-GE3
|
TME | Transistor: N-MOSFET, unipolar, 600V, 12A, Idm: 49A, 179W, TO247AC Min Qty: 1 | 0 |
|
$2.9800 / $4.4800 | RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SIHG22N60AE-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHG22N60AE-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Date Of Intro | 2016-09-25 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 204 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 179 W | |
Pulsed Drain Current-Max (IDM) | 49 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 132 ns | |
Turn-on Time-Max (ton) | 104 ns |