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Overview of SIHG11N80E-GE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 7 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHG11N80E-GE3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
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DISTI #
78AC6521
|
Newark | Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:800V, On Resistance Rds(On):0.38Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SIHG11N80E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$3.2400 / $4.4900 | Buy Now | |
DISTI #
SIHG11N80E-GE3
|
Avnet Americas | N-CHANNEL 800V (Alt: SIHG11N80E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 18 Weeks, 0 Days | 0 |
|
$2.3183 | Buy Now | |
DISTI #
78-SIHG11N80E-GE3
|
Mouser Electronics | MOSFETs 800V Vds 30V Vgs TO-247AC RoHS: Compliant | 463 |
|
$1.9200 / $3.9500 | Buy Now | |
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 21 Weeks | 0 |
|
$1.9400 | Buy Now | ||
DISTI #
SIHG11N80E-GE3
|
TTI | MOSFETs 800V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 500 In Stock |
|
$2.3000 / $2.5400 | Buy Now | |
DISTI #
SIHG11N80E-GE3
|
TME | Transistor: N-MOSFET, unipolar, 800V, 8A, Idm: 32A, 179W, TO247AC Min Qty: 1 | 0 |
|
$4.1700 / $6.2600 | RFQ | |
DISTI #
SIHG11N80E-GE3
|
EBV Elektronik | (Alt: SIHG11N80E-GE3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 19 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for SIHG11N80E-GE3 by Vishay Intertechnologies
Part Data Attributes for SIHG11N80E-GE3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
18 Weeks
|
Samacsys Manufacturer
|
Vishay
|
Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
|
226 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
800 V
|
Drain Current-Max (ID)
|
12 A
|
Drain-source On Resistance-Max
|
0.44 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
9 pF
|
JEDEC-95 Code
|
TO-247AC
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
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Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
179 W
|
Pulsed Drain Current-Max (IDM)
|
32 A
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
146 ns
|
Turn-on Time-Max (ton)
|
66 ns
|