Datasheets
SIHFR1N60A-GE3 by:
Vishay Siliconix
Vishay Intertechnologies
Vishay Siliconix
Not Found

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for SIHFR1N60A-GE3 by Vishay Siliconix

Results Overview of SIHFR1N60A-GE3 by Vishay Siliconix

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SIHFR1N60A-GE3 Information

SIHFR1N60A-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIHFR1N60A-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHFR1N60A-GE3-ND
DigiKey MOSFET N-CH 600V 1.4A TO252AA Min Qty: 1 Lead time: 15 Weeks Container: Tube Temporarily Out of Stock
  • 1 $0.6900
  • 10 $0.5700
  • 100 $0.4651
  • 500 $0.4259
  • 1,000 $0.3960
  • 3,000 $0.3913
  • 6,000 $0.3728
  • 12,000 $0.3612
$0.3612 / $0.6900 Buy Now

Part Details for SIHFR1N60A-GE3

SIHFR1N60A-GE3 CAD Models

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SIHFR1N60A-GE3 Part Data Attributes

SIHFR1N60A-GE3 Vishay Siliconix
Buy Now Datasheet
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SIHFR1N60A-GE3 Vishay Siliconix TRANSISTOR POWER, FET, FET General Purpose Power
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Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 1.4 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Surface Mount YES

Alternate Parts for SIHFR1N60A-GE3

This table gives cross-reference parts and alternative options found for SIHFR1N60A-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR1N60A-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR1N60ATRLPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60ATRLPBF
IRFR1N60APBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60APBF
Part Number Manufacturer Composite Price Description Compare
SIHFR1N60A-GE3 Vishay Intertechnologies $0.5675 Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, SIHFR1N60A-GE3 vs SIHFR1N60A-GE3
IRFR1N60ATRL International Rectifier Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60ATRL
IRFR1N60ATRPBF Vishay Intertechnologies $0.9754 Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60ATRPBF
IRFR1N60APBF International Rectifier Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60APBF
IRFR1N60ATR International Rectifier Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60ATR
IRFR1N60ATRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60ATRRPBF
IRFR1N60A International Rectifier Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60A
SIHFR1N60ATRL-GE3 Vishay Siliconix Check for Price TRANSISTOR POWER, FET, FET General Purpose Power SIHFR1N60A-GE3 vs SIHFR1N60ATRL-GE3
SIHFR1N60ATR-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, SIHFR1N60A-GE3 vs SIHFR1N60ATR-GE3
IRFR1N60ATRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 SIHFR1N60A-GE3 vs IRFR1N60ATRLPBF

SIHFR1N60A-GE3 Related Parts

SIHFR1N60A-GE3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for SIHFR1N60A-GE3 is -55°C to 175°C.

  • Yes, SIHFR1N60A-GE3 is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the EU's directive on the restriction of certain hazardous substances in electrical and electronic equipment.

  • The typical lead time for SIHFR1N60A-GE3 can vary depending on the supplier and the quantity ordered. However, it is typically around 8-12 weeks.

  • Yes, SIHFR1N60A-GE3 is AEC-Q101 qualified, which means it meets the Automotive Electronics Council's (AEC) standards for reliability and performance in automotive applications.

  • The recommended storage temperature range for SIHFR1N60A-GE3 is -40°C to 125°C.