Datasheets
SIHFPS40N50L-GE3 by: Vishay Intertechnologies

Power Field-Effect Transistor,

Part Details for SIHFPS40N50L-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

SIHFPS40N50L-GE3 Information

SIHFPS40N50L-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIHFPS40N50L-GE3

Part # Distributor Description Stock Price Buy
DISTI # 3650270
Farnell MOSFET, N-CH, 500V, 46A, SUPER-247 RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Each 1
  • 1 $7.6378
  • 5 $7.0682
  • 10 $6.4857
$6.4857 / $7.6378 Buy Now
DISTI # SIHFPS40N50L-GE3
TTI MOSFETs SPR247 500V 46A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 20 Package Multiple: 20 Container: Tube Americas - 0
  • 20 $5.5700
$5.5700 Buy Now
DISTI # SIHFPS40N50L-GE3
TME Transistor: N-MOSFET, unipolar, 500V, 29A, Idm: 180A, 540W, SUPER247 Min Qty: 1 0
  • 1 $8.6000
  • 5 $7.7400
  • 30 $6.8300
  • 150 $6.1500
  • 480 $5.7300
$5.7300 / $8.6000 RFQ
DISTI # SIHFPS40N50L-GE3
EBV Elektronik MOSFET NCHANNEL 500V (Alt: SIHFPS40N50L-GE3) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days EBV - 480
Buy Now

Part Details for SIHFPS40N50L-GE3

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SIHFPS40N50L-GE3 Part Data Attributes

SIHFPS40N50L-GE3 Vishay Intertechnologies
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SIHFPS40N50L-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 920 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 46 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 130 pF
JEDEC-95 Code TO-274AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 540 W
Pulsed Drain Current-Max (IDM) 180 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

SIHFPS40N50L-GE3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for SIHFPS40N50L-GE3 is -55°C to 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • The recommended gate resistor value for SIHFPS40N50L-GE3 is between 10Ω to 100Ω, depending on the specific application and switching frequency.

  • Yes, SIHFPS40N50L-GE3 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and consider the effects of switching losses.

  • Use a suitable voltage regulator or overvoltage protection circuit, and consider adding a current sense resistor and overcurrent protection circuit to prevent damage from excessive current.