Part Details for SIHFPS40N50L-GE3 by Vishay Intertechnologies
Results Overview of SIHFPS40N50L-GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SIHFPS40N50L-GE3 Information
SIHFPS40N50L-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHFPS40N50L-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3650270
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Farnell | MOSFET, N-CH, 500V, 46A, SUPER-247 RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Each | 1 |
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$6.4857 / $7.6378 | Buy Now |
DISTI #
SIHFPS40N50L-GE3
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TTI | MOSFETs SPR247 500V 46A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 20 Package Multiple: 20 Container: Tube | Americas - 0 |
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$5.5700 | Buy Now |
DISTI #
SIHFPS40N50L-GE3
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TME | Transistor: N-MOSFET, unipolar, 500V, 29A, Idm: 180A, 540W, SUPER247 Min Qty: 1 | 0 |
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$5.7300 / $8.6000 | RFQ |
DISTI #
SIHFPS40N50L-GE3
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EBV Elektronik | MOSFET NCHANNEL 500V (Alt: SIHFPS40N50L-GE3) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 480 |
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Buy Now |
Part Details for SIHFPS40N50L-GE3
SIHFPS40N50L-GE3 CAD Models
SIHFPS40N50L-GE3 Part Data Attributes
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SIHFPS40N50L-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SIHFPS40N50L-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 920 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 46 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 130 pF | |
JEDEC-95 Code | TO-274AA | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 540 W | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |