Part Details for SIHFPS40N50L-GE3 by Vishay Intertechnologies
Overview of SIHFPS40N50L-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SIHFPS40N50L-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
25AJ2820
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Newark | Mosfet, N-Ch, 500V, 46A, Super-247 Rohs Compliant: Yes |Vishay SIHFPS40N50L-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.2700 / $7.3700 | Buy Now |
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DISTI #
SIHFPS40N50L-GE3
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TTI | MOSFETs SPR247 500V 46A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 20 Package Multiple: 20 Container: Tube |
Americas - 80 In Stock |
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$3.8700 / $5.8400 | Buy Now |
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DISTI #
SIHFPS40N50L-GE3
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TME | Transistor: N-MOSFET, unipolar, 500V, 29A, Idm: 180A, 540W, SUPER247 Min Qty: 1 | 0 |
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$6.0100 / $9.0100 | RFQ |
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DISTI #
SIHFPS40N50L-GE3
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EBV Elektronik | MOSFET N-CHANNEL 500V (Alt: SIHFPS40N50L-GE3) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days | EBV - 480 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 390 |
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$7.5600 / $8.1700 | Buy Now |
Part Details for SIHFPS40N50L-GE3
SIHFPS40N50L-GE3 CAD Models
SIHFPS40N50L-GE3 Part Data Attributes
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SIHFPS40N50L-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHFPS40N50L-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 920 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 46 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 130 pF | |
| JEDEC-95 Code | TO-274AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 540 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |