Part Details for SIHFBE30S-GE3 by Vishay Siliconix
Overview of SIHFBE30S-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for SIHFBE30S-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
742-SIHFBE30S-GE3CT-ND
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DigiKey | MOSFET N-CHANNEL 800V Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
990 In Stock |
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$0.7412 / $1.7700 | Buy Now |
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New Advantage Corporation | Single N-Channel 800 V 3 Ohm 78 nC 125 W Silicon SMT Mosfet - TO-263-3 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 2000 |
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$1.0500 / $1.1300 | Buy Now |
Part Details for SIHFBE30S-GE3
SIHFBE30S-GE3 CAD Models
SIHFBE30S-GE3 Part Data Attributes:
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SIHFBE30S-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHFBE30S-GE3
Vishay Siliconix
TRANSISTOR 4.1 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHFBE30S-GE3
This table gives cross-reference parts and alternative options found for SIHFBE30S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFBE30S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTB4N80E | 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | onsemi | SIHFBE30S-GE3 vs MTB4N80E |
| SIHFBE30STRL-GE3 | TRANSISTOR 4.1 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHFBE30S-GE3 vs SIHFBE30STRL-GE3 |
| SIHFBE30STRL-GE3 | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SIHFBE30S-GE3 vs SIHFBE30STRL-GE3 |
| IRFBE30STRLPBF | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHFBE30S-GE3 vs IRFBE30STRLPBF |