Datasheets
SIHF7N60E-E3 by:

Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for SIHF7N60E-E3 by Vishay Intertechnologies

Overview of SIHF7N60E-E3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHF7N60E-E3

Part # Distributor Description Stock Price Buy
DISTI # 79AH6482
Newark N-Channel 600V Rohs Compliant: No |Vishay SIHF7N60E-E3 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 8000
  • 1 $1.0100
$1.0100 Buy Now
DISTI # SIHF7N60E-E3
Avnet Americas N-CHANNEL 600V - Tape and Reel (Alt: SIHF7N60E-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 8000
  • 1,000 $0.9675
  • 2,000 $0.9520
  • 4,000 $0.9371
  • 6,000 $0.9214
  • 8,000 $0.9106
$0.9106 / $0.9675 Buy Now
DISTI # 78-SIHF7N60E-E3
Mouser Electronics MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant 70
  • 1 $2.3600
  • 10 $1.9600
  • 100 $1.4500
  • 250 $1.3900
  • 500 $1.2600
  • 1,000 $1.0400
  • 2,000 $1.0300
  • 5,000 $1.0200
$1.0200 / $2.3600 Buy Now
Future Electronics SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks Container: Reel 0
Reel
  • 1,000 $1.0400
  • 2,000 $1.0100
  • 3,000 $0.9950
  • 4,000 $0.9900
  • 5,000 $0.9600
$0.9600 / $1.0400 Buy Now
Future Electronics SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.0400
  • 2,000 $1.0100
  • 3,000 $0.9950
  • 4,000 $0.9900
  • 5,000 $0.9600
$0.9600 / $1.0400 Buy Now
Future Electronics SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks Container: Bulk 0
Bulk
  • 1 $1.2000
  • 40 $1.1500
  • 150 $1.1000
  • 500 $1.0500
  • 2,000 $0.9600
$0.9600 / $1.2000 Buy Now
DISTI # SIHF7N60E-E3
TTI MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $1.0300
  • 2,000 $1.0100
  • 10,000 $0.9900
$0.9900 / $1.0300 Buy Now
DISTI # SIHF7N60E-E3
TME Transistor: N-MOSFET, unipolar, 600V, 5A, Idm: 18A, 31W, TO220FP Min Qty: 1 0
  • 1 $2.0300
  • 5 $1.8300
  • 25 $1.6200
  • 100 $1.4600
  • 500 $1.3600
$1.3600 / $2.0300 RFQ
DISTI # SIHF7N60E-E3
EBV Elektronik N-CHANNEL 600V (Alt: SIHF7N60E-E3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHF7N60E-E3

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SIHF7N60E-E3 Part Data Attributes

SIHF7N60E-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHF7N60E-E3 Vishay Intertechnologies Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 43 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 609 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 31 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 76 ns
Turn-on Time-Max (ton) 52 ns

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