Part Details for SIHF7N60E-E3 by Vishay Intertechnologies
Results Overview of SIHF7N60E-E3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SIHF7N60E-E3 Information
SIHF7N60E-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHF7N60E-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79AH6482
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Newark | N-Channel 600V Rohs Compliant: No |Vishay SIHF7N60E-E3 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 7000 |
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$0.9680 | Buy Now |
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DISTI #
SIHF7N60E-E3
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Avnet Americas | N-CHANNEL 600V - Tape and Reel (Alt: SIHF7N60E-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days Container: Reel |
7000 |
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$0.9106 / $0.9675 | Buy Now |
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DISTI #
78-SIHF7N60E-E3
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Mouser Electronics | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | 70 |
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$0.9670 / $1.2300 | Buy Now |
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DISTI #
SIHF7N60E-E3
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TTI | MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.9400 / $0.9800 | Buy Now |
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DISTI #
SIHF7N60E-E3
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TME | Transistor: N-MOSFET, unipolar, 600V, 5A, Idm: 18A, 31W, TO220FP Min Qty: 1 | 0 |
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$1.2800 / $1.9200 | RFQ |
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DISTI #
SIHF7N60E-E3
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EBV Elektronik | NCHANNEL 600V (Alt: SIHF7N60E-E3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 4576 |
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RFQ |
Part Details for SIHF7N60E-E3
SIHF7N60E-E3 CAD Models
SIHF7N60E-E3 Part Data Attributes
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SIHF7N60E-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHF7N60E-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 43 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 609 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 76 ns | |
| Turn-on Time-Max (ton) | 52 ns |
SIHF7N60E-E3 Frequently Asked Questions (FAQ)
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The recommended gate resistor value for SIHF7N60E-E3 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and ringing, but may increase the turn-on time.
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To ensure reliable operation of SIHF7N60E-E3 in high-temperature environments, it is essential to provide adequate heat sinking and thermal management. The MOSFET should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the ambient temperature should be kept below 150°C. Additionally, the device should be operated within its specified maximum junction temperature (Tj) of 175°C.
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The SIHF7N60E-E3 MOSFET can withstand voltage spikes or transients up to 1.5 times the maximum rated drain-source voltage (Vds) for a duration of less than 10 microseconds. However, it is recommended to use a voltage clamp or snubber circuit to limit voltage transients and ensure reliable operation.
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Yes, the SIHF7N60E-E3 MOSFET is suitable for high-frequency switching applications up to 100 kHz. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuit is capable of providing a fast and clean switching signal.
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To prevent parasitic oscillations or ringing in the MOSFET's drain-source circuit, it is recommended to use a snubber circuit or a damping resistor in series with the drain-source circuit. Additionally, ensuring a low-inductance layout and using a high-frequency capable gate drive circuit can help minimize ringing and oscillations.