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Part Details for SIHF30N60E-GE3 by Vishay Intertechnologies
Overview of SIHF30N60E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHF30N60E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIHF30N60E-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 29A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF30N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$2.9700 / $3.7730 | Buy Now |
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DISTI #
78-SIHF30N60E-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | 1377 |
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$2.8400 / $5.8900 | Buy Now |
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Future Electronics | E Series N Channel 600 V 0.125 Ω 130 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.9600 / $3.2300 | Buy Now |
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Future Electronics | E Series N Channel 600 V 0.125 Ω 130 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$2.9600 / $3.2300 | Buy Now |
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DISTI #
SIHF30N60E-GE3
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TTI | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 10000 In Stock |
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$2.8100 / $4.1000 | Buy Now |
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DISTI #
SIHF30N60E-GE3
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TME | Transistor: N-MOSFET, unipolar, 650V, 18A, Idm: 676A, 37W, TO220FP Min Qty: 1 | 0 |
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$4.8800 / $6.8300 | RFQ |
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DISTI #
SIHF30N60E-GE3
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EBV Elektronik | Trans MOSFET N-CH 600V 29A 3-Pin TO-220FP (Alt: SIHF30N60E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days | EBV - 100 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 100 |
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$10.7500 / $11.5600 | Buy Now |
Part Details for SIHF30N60E-GE3
SIHF30N60E-GE3 CAD Models
SIHF30N60E-GE3 Part Data Attributes:
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SIHF30N60E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHF30N60E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37 W | |
| Pulsed Drain Current-Max (IDM) | 65 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHF30N60E-GE3
This table gives cross-reference parts and alternative options found for SIHF30N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF30N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPA60R125C6XKSA1 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | Infineon Technologies AG | SIHF30N60E-GE3 vs IPA60R125C6XKSA1 |
| R6030KNXC7 | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF30N60E-GE3 vs R6030KNXC7 |
| R6020ENX | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF30N60E-GE3 vs R6020ENX |
| R6030ENX | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF30N60E-GE3 vs R6030ENX |
| R6020ENZC8 | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PF, 3 PIN | ROHM Semiconductor | SIHF30N60E-GE3 vs R6020ENZC8 |