Datasheets
SIHF15N60E-GE3 by:

Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3

Part Details for SIHF15N60E-GE3 by Vishay Intertechnologies

Overview of SIHF15N60E-GE3 by Vishay Intertechnologies

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Price & Stock for SIHF15N60E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 19X1935
Newark Mosfet, N-Ch, 600V, 15A, 150Deg C, 34W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:15A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SIHF15N60E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1
  • 1 $0.4970
  • 10 $0.4970
  • 25 $0.4970
  • 50 $0.4970
  • 100 $0.4970
  • 500 $0.4970
  • 1,000 $0.4970
  • 2,500 $0.4970
$0.4970 Buy Now
DISTI # SIHF15N60E-GE3
Avnet Americas Trans MOSFET N-CH 600V 15A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF15N60E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.0130
$2.0130 Buy Now
DISTI # 19X1935
Avnet Americas Trans MOSFET N-CH 600V 15A 3-Pin TO-220FP - Bulk (Alt: 19X1935) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 5 Days Container: Bulk 0
  • 1 $3.2500
  • 10 $2.6500
  • 25 $2.4500
  • 50 $2.2600
  • 100 $1.9900
$1.9900 / $3.2500 Buy Now
DISTI # 78-SIHF15N60E-GE3
Mouser Electronics MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant 1036
  • 1 $2.9700
  • 10 $2.5000
  • 25 $2.0400
  • 100 $1.8200
  • 250 $1.7800
  • 500 $1.6700
  • 1,000 $1.4700
  • 2,000 $1.4300
  • 5,000 $1.3800
$1.3800 / $2.9700 Buy Now
Future Electronics E Series N Channel 600 V 0.28 Ω 78 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.5400
  • 200 $1.5000
  • 500 $1.4700
  • 1,250 $1.4400
  • 2,000 $1.4000
$1.4000 / $1.5400 Buy Now
Future Electronics E Series N Channel 600 V 0.28 Ω 78 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.5400
  • 200 $1.5000
  • 500 $1.4700
  • 1,250 $1.4400
  • 2,000 $1.4000
$1.4000 / $1.5400 Buy Now
DISTI # SIHF15N60E-GE3
TTI MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 10000
In Stock
  • 50 $2.0200
  • 100 $1.8000
  • 250 $1.7600
  • 500 $1.6500
  • 1,000 $1.4500
  • 2,000 $1.4200
  • 5,000 $1.3900
$1.3900 / $2.0200 Buy Now
DISTI # SIHF15N60E-GE3
TME Transistor: N-MOSFET, unipolar, 600V, 9.6A, Idm: 39A, 34W, TO220FP Min Qty: 1 0
  • 1 $2.9100
  • 5 $2.6200
  • 25 $2.3200
  • 100 $2.0800
  • 500 $1.9400
$1.9400 / $2.9100 RFQ
DISTI # SIHF15N60E-GE3
EBV Elektronik Trans MOSFET N-CH 600V 15A 3-Pin TO-220FP (Alt: SIHF15N60E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHF15N60E-GE3

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SIHF15N60E-GE3 Part Data Attributes:

SIHF15N60E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHF15N60E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks, 5 Days
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 102 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 34 W
Pulsed Drain Current-Max (IDM) 39 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHF15N60E-GE3

This table gives cross-reference parts and alternative options found for SIHF15N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF15N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPA15N60C3XK Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 Infineon Technologies AG SIHF15N60E-GE3 vs SPA15N60C3XK
SIHA15N60E-E3 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies SIHF15N60E-GE3 vs SIHA15N60E-E3
R6015ENX Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN ROHM Semiconductor SIHF15N60E-GE3 vs R6015ENX

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