Part Details for SIHD6N65ET5-GE3 by Vishay Intertechnologies
Overview of SIHD6N65ET5-GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHD6N65ET5-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHD6N65ET5-GE3
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Avnet Americas | N-CHANNEL 650V - Tape and Reel (Alt: SIHD6N65ET5-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.6615 | Buy Now |
DISTI #
78-SIHD6N65ET5-GE3
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Mouser Electronics | MOSFETs 650V Vds E Series DPAK TO-252 RoHS: Compliant | 0 |
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$0.6560 / $0.6980 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks | 0 |
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$0.6850 | Buy Now |
DISTI #
SIHD6N65ET5-GE3
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TTI | MOSFETs 650V Vds E Series DPAK TO-252 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.6500 / $0.6820 | Buy Now |
Part Details for SIHD6N65ET5-GE3
SIHD6N65ET5-GE3 CAD Models
SIHD6N65ET5-GE3 Part Data Attributes
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SIHD6N65ET5-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SIHD6N65ET5-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Date Of Intro | 2016-05-02 | |
Avalanche Energy Rating (Eas) | 56 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 78 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 52 ns |