Part Details for SIHB4N80E-GE3 by Vishay Intertechnologies
Overview of SIHB4N80E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHB4N80E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHB4N80E-GE3
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Avnet Americas | N-CHANNEL 800V (Alt: SIHB4N80E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | 0 |
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$0.9059 / $0.9625 | Buy Now |
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DISTI #
78-SIHB4N80E-GE3
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Mouser Electronics | MOSFETs 800V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 |
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$1.0700 / $1.0800 | Order Now |
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Future Electronics | MOSFET N-CHANNEL 800V 4.3A D2PAK TO-263 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 13 Weeks Container: Tube | 0Tube |
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$0.9750 / $1.0500 | Buy Now |
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DISTI #
SIHB4N80E-GE3
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TTI | MOSFETs 800V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
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$0.9700 | Buy Now |
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DISTI #
SIHB4N80E-GE3
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TME | Transistor: N-MOSFET, unipolar, 800V, 2.7A, Idm: 11A, 69W Min Qty: 1 | 0 |
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$1.5800 / $2.3700 | RFQ |
Part Details for SIHB4N80E-GE3
SIHB4N80E-GE3 CAD Models
SIHB4N80E-GE3 Part Data Attributes
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SIHB4N80E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB4N80E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 56 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 1.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 11 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 92 ns | |
| Turn-on Time-Max (ton) | 38 ns |