Part Details for SIHB30N60E-E3 by Vishay Siliconix
Overview of SIHB30N60E-E3 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SIHB30N60E-E3
SIHB30N60E-E3 CAD Models
SIHB30N60E-E3 Part Data Attributes:
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SIHB30N60E-E3
Vishay Siliconix
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Datasheet
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SIHB30N60E-E3
Vishay Siliconix
TRANSISTOR 29 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 65 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHB30N60E-E3
This table gives cross-reference parts and alternative options found for SIHB30N60E-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB30N60E-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW60R125C6FKSA1 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHB30N60E-E3 vs IPW60R125C6FKSA1 |
| R6030ENZ1C9 | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | SIHB30N60E-E3 vs R6030ENZ1C9 |
| SIHP28N65E-GE3 | Power Field-Effect Transistor, 28A I(D), 650V, 0.122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB30N60E-E3 vs SIHP28N65E-GE3 |
| SIHB30N60E-GE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Vishay Intertechnologies | SIHB30N60E-E3 vs SIHB30N60E-GE3 |
| SIHP28N60EF-GE3 | Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB30N60E-E3 vs SIHP28N60EF-GE3 |
| IPP60R125C6 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SIHB30N60E-E3 vs IPP60R125C6 |
| IPP60R125C6XKSA1 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHB30N60E-E3 vs IPP60R125C6XKSA1 |
| IPW60R125C6 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHB30N60E-E3 vs IPW60R125C6 |
| SIHB30N60E-E3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHB30N60E-E3 vs SIHB30N60E-E3 |
| FMP30N60S1FD | Power Field-Effect Transistor | Fuji Electric Co Ltd | SIHB30N60E-E3 vs FMP30N60S1FD |