Transistors
SIHB24N65E-GE3
Description: Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

Overview of SIHB24N65E-GE3 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHB24N65E-GE3 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # 742-SIHB24N65E-GE3-ND
DigiKey MOSFET N-CH 650V 24A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Tube 1868
In Stock
  • 1 $5.6400
  • 50 $3.2088
  • 100 $2.9635
  • 500 $2.6625
$2.6625 / $5.6400 Buy Now

CAD Models for SIHB24N65E-GE3 by Vishay Siliconix
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Part Data Attributes for SIHB24N65E-GE3 by Vishay Siliconix

SIHB24N65E-GE3
Vishay Siliconix
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
508 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain Current-Max (ID)
24 A
Drain-source On Resistance-Max
0.145 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
70 A
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SIHB24N65E-GE3
    Vishay Siliconix
    Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3
    VS

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