Part Details for SIHB12N50C-E3 by Vishay Siliconix
Overview of SIHB12N50C-E3 by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHB12N50C-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SIHB12N50C-E3-ND
|
DigiKey | MOSFET N-CH 500V 12A D2PAK Min Qty: 1000 Lead time: 20 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$2.4625 / $2.6152 | Buy Now |
|
DISTI #
70616559
|
RS | SIHB12N50C-E3 N-channel MOSFET Transistor, 12 A, 500 V, 3-Pin D2PAK | Siliconix / Vishay SIHB12N50C-E3 RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Container: Bulk | 0 |
|
$3.1100 / $3.6600 | RFQ |
|
|
Bristol Electronics | 550 |
|
RFQ | ||
|
|
Quest Components | 440 |
|
$3.2208 / $5.8560 | Buy Now |
Part Details for SIHB12N50C-E3
SIHB12N50C-E3 CAD Models
SIHB12N50C-E3 Part Data Attributes:
|
|
SIHB12N50C-E3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SIHB12N50C-E3
Vishay Siliconix
SiHB12N60E E Series Power MOSFET
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.555 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |