There are no models available for this part yet.
Overview of SIHA21N80AE-GE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 6 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for SIHA21N80AE-GE3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
93AH0379
|
Newark | Mosfet, N-Ch, 800V, 7.5A, To-220Fp Rohs Compliant: Yes |Vishay SIHA21N80AE-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 889 |
|
$1.8600 / $2.9800 | Buy Now | |
DISTI #
SIHA21N80AE-GE3
|
Avnet Americas | N-CHANNEL 800V (Alt: SIHA21N80AE-GE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days | 0 |
|
$1.2337 | Buy Now | |
DISTI #
78-SIHA21N80AE-GE3
|
Mouser Electronics | MOSFETs TO220 800V 7.5A N-CH MOSFET RoHS: Compliant | 869 |
|
$1.2500 / $2.0500 | Buy Now | |
Future Electronics | MOSFET 800V N-CHANNEL Id - Continuous Drain Current 7.5 A RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 18 Weeks Container: Tube | 0Tube |
|
$1.2100 / $1.3400 | Buy Now | ||
DISTI #
SIHA21N80AE-GE3
|
TTI | MOSFETs TO220 800V 7.5A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
|
$1.2600 | Buy Now | |
DISTI #
C1S803606450077
|
Chip1Stop | MOSFET RoHS: Compliant | 3 |
|
$2.2100 | Buy Now |
CAD Models for SIHA21N80AE-GE3 by Vishay Intertechnologies
Part Data Attributes for SIHA21N80AE-GE3 by Vishay Intertechnologies
|
|
---|---|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
,
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
18 Weeks
|
Date Of Intro
|
2020-07-06
|
Samacsys Manufacturer
|
Vishay
|
Additional Feature
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AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
127 mJ
|
Case Connection
|
ISOLATED
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
800 V
|
Drain Current-Max (ID)
|
7.5 A
|
Drain-source On Resistance-Max
|
0.235 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
5 pF
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
33 W
|
Pulsed Drain Current-Max (IDM)
|
38 A
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
221 ns
|
Turn-on Time-Max (ton)
|
118 ns
|