Part Details for SIHA12N60E-E3 by Vishay Intertechnologies
Overview of SIHA12N60E-E3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHA12N60E-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55X3085
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Newark | Power Mosfet, N Channel, 12 A, 600 V, 0.32 Ohm, 10 V, 4 V Rohs Compliant: Yes |Vishay SIHA12N60E-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 820 |
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$2.0000 / $2.7400 | Buy Now |
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DISTI #
86AK6216
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Newark | Mosfet, N-Ch, 600V, 12A, To-220F Rohs Compliant: Yes |Vishay SIHA12N60E-E3 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.2500 / $1.5300 | Buy Now |
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DISTI #
SIHA12N60E-E3
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Avnet Americas | Trans MOSFET N-CH 600V 12A 3-Pin TO-220 T/R - Tape and Reel (Alt: SIHA12N60E-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$1.1016 / $1.3994 | Buy Now |
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DISTI #
78-SIHA12N60E-E3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | 851 |
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$1.0500 / $2.4300 | Buy Now |
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Future Electronics | N-Channel 600 V 33 W 29 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.0500 / $1.0900 | Buy Now |
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Future Electronics | N-Channel 600 V 33 W 29 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.0500 / $1.0900 | Buy Now |
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DISTI #
SIHA12N60E-E3
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TTI | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 2050 In Stock |
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$1.0400 / $1.9400 | Buy Now |
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DISTI #
SIHA12N60E-E3
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EBV Elektronik | Trans MOSFET N-CH 600V 12A 3-Pin TO-220 T/R (Alt: SIHA12N60E-E3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHA12N60E-E3
SIHA12N60E-E3 CAD Models
SIHA12N60E-E3 Part Data Attributes:
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SIHA12N60E-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHA12N60E-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 117 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33 W | |
| Pulsed Drain Current-Max (IDM) | 27 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 108 ns | |
| Turn-on Time-Max (ton) | 66 ns |
Alternate Parts for SIHA12N60E-E3
This table gives cross-reference parts and alternative options found for SIHA12N60E-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHA12N60E-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPA11N60C3XKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | SIHA12N60E-E3 vs SPA11N60C3XKSA1 |
| STFU15NM65N | N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package | STMicroelectronics | SIHA12N60E-E3 vs STFU15NM65N |
| TK12A60U(Q) | MOSFET N-CH 600V 12A SC-67 | Toshiba America Electronic Components | SIHA12N60E-E3 vs TK12A60U(Q) |
| KP11N60F | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS, 3 PIN | KEC | SIHA12N60E-E3 vs KP11N60F |
| LSD11N65E | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | SIHA12N60E-E3 vs LSD11N65E |
| R6011ENX | Power Field-Effect Transistor, 11A I(D), 600V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHA12N60E-E3 vs R6011ENX |
| SIHF12N65E-GE3 | Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3 | Vishay Intertechnologies | SIHA12N60E-E3 vs SIHF12N65E-GE3 |
| STF14NM65N | N-channel 650 V, 0.33 Ohm, 12 A MDmesh(TM) II Power MOSFET TO-220FP | STMicroelectronics | SIHA12N60E-E3 vs STF14NM65N |
| SSF11NS60F | Power Field-Effect Transistor, 11A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SIHA12N60E-E3 vs SSF11NS60F |
| SPA11N65C3XKSA1 | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | SIHA12N60E-E3 vs SPA11N65C3XKSA1 |