Part Details for SIHA12N50E-GE3 by Vishay Intertechnologies
Overview of SIHA12N50E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIHA12N50E-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
26AK5785
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Newark | Mosfet, N-Ch, 500V, 10.5A, To-220Fp Rohs Compliant: Yes |Vishay SIHA12N50E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 46 |
|
$1.2100 / $2.0300 | Buy Now |
DISTI #
SIHA12N50E-GE3
|
Avnet Americas | E Series Power MOSFET N-Channel 550V 10.5A 3-Pin TO-220 FULLPAK - Tape and Reel (Alt: SIHA12N50E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.0966 | Buy Now |
DISTI #
78-SIHA12N50E-GE3
|
Mouser Electronics | MOSFET N-CHANNEL 500V RoHS: Compliant | 0 |
|
$1.0200 / $1.7900 | Order Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
|
$0.8070 | Buy Now |
DISTI #
SIHA12N50E-GE3
|
TTI | MOSFET N-CHANNEL 500V RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Americas - 2000 In Stock |
|
$1.0200 | Buy Now |
Part Details for SIHA12N50E-GE3
SIHA12N50E-GE3 CAD Models
SIHA12N50E-GE3 Part Data Attributes:
|
SIHA12N50E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHA12N50E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Avalanche Energy Rating (Eas) | 103 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 10.5 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 32 W | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 82 ns | |
Turn-on Time-Max (ton) | 58 ns |