Datasheets
SIGC68T170R3 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 50A I(C), 1700V V(BR)CES, N-Channel, 8.23 X 8.25 MM, DIE

Part Details for SIGC68T170R3 by Infineon Technologies AG

Results Overview of SIGC68T170R3 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

SIGC68T170R3 Information

SIGC68T170R3 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SIGC68T170R3

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SIGC68T170R3 Part Data Attributes

SIGC68T170R3 Infineon Technologies AG
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SIGC68T170R3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1700V V(BR)CES, N-Channel, 8.23 X 8.25 MM, DIE
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUUC-N
Number of Elements 1
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON