Datasheets
SIGC57T120R3L by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, 7.60 X 7.53 MM, DIE-6

Part Details for SIGC57T120R3L by Infineon Technologies AG

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SIGC57T120R3L Information

SIGC57T120R3L by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SIGC57T120R3L

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SIGC57T120R3L Part Data Attributes

SIGC57T120R3L Infineon Technologies AG
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SIGC57T120R3L Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, 7.60 X 7.53 MM, DIE-6
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Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUUC-N6
JESD-609 Code e3
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 140 ns