Datasheets
SIGC42T170R3GG by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, 6.50 X 6.46 MM, DIE

Part Details for SIGC42T170R3GG by Infineon Technologies AG

Results Overview of SIGC42T170R3GG by Infineon Technologies AG

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Applications Space Technology Internet of Things (IoT) Industrial Automation Renewable Energy Electronic Manufacturing Communication and Networking

SIGC42T170R3GG Information

SIGC42T170R3GG by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SIGC42T170R3GG

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SIGC42T170R3GG Part Data Attributes

SIGC42T170R3GG Infineon Technologies AG
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SIGC42T170R3GG Infineon Technologies AG Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES, N-Channel, 6.50 X 6.46 MM, DIE
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Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 29 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
JESD-30 Code R-XUUC-N
JESD-609 Code e3
Number of Elements 1
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON