Datasheets
SIGC42T120CS2 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, DIE-3

Part Details for SIGC42T120CS2 by Infineon Technologies AG

Results Overview of SIGC42T120CS2 by Infineon Technologies AG

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SIGC42T120CS2 Information

SIGC42T120CS2 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SIGC42T120CS2

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SIGC42T120CS2 Part Data Attributes

SIGC42T120CS2 Infineon Technologies AG
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SIGC42T120CS2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, DIE-3
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Collector Current-Max (IC) 25 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUUC-N3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON