Part Details for SIGC32T120R3 by Infineon Technologies AG
Overview of SIGC32T120R3 by Infineon Technologies AG
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Part Details for SIGC32T120R3
SIGC32T120R3 CAD Models
SIGC32T120R3 Part Data Attributes
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SIGC32T120R3
Infineon Technologies AG
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Datasheet
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SIGC32T120R3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, DIE
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | DIE | |
| Package Description | UNCASED CHIP, R-XUUC-N | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUUC-N | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 610 ns | |
| Turn-on Time-Nom (ton) | 135 ns |