Part Details for SIGC156T60NR2C by Infineon Technologies AG
Results Overview of SIGC156T60NR2C by Infineon Technologies AG
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
SIGC156T60NR2C Information
SIGC156T60NR2C by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SIGC156T60NR2C
SIGC156T60NR2C CAD Models
SIGC156T60NR2C Part Data Attributes
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SIGC156T60NR2C
Infineon Technologies AG
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Datasheet
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SIGC156T60NR2C
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, 12.5 X 12.5 MM, DIE
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | DIE | |
| Package Description | 12.5 X 12.5 MM, DIE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | S-XUUC-N11 | |
| Number of Elements | 1 | |
| Number of Terminals | 11 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 326 ns | |
| Turn-on Time-Nom (ton) | 229 ns |