Part Details for SIGC11T60NC by Infineon Technologies AG
Overview of SIGC11T60NC by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SIGC11T60NC
SIGC11T60NC CAD Models
SIGC11T60NC Part Data Attributes
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SIGC11T60NC
Infineon Technologies AG
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Datasheet
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SIGC11T60NC
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.25 X 3.25 MM, DIE-2
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | DIE | |
Package Description | 3.25 X 3.25 MM, DIE-2 | |
Pin Count | 2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | S-XUUC-N2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 130 ns | |
Turn-on Time-Nom (ton) | 28 ns |
Alternate Parts for SIGC11T60NC
This table gives cross-reference parts and alternative options found for SIGC11T60NC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIGC11T60NC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIGC11T60NCX1SA2 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.25 X 3.25 MM, DIE-2 | Infineon Technologies AG | SIGC11T60NC vs SIGC11T60NCX1SA2 |
SIGC12T60NC | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 3.5 X 3.5 MM, DIE-2 | Infineon Technologies AG | SIGC11T60NC vs SIGC12T60NC |
SIGC06T60E | Insulated Gate Bipolar Transistor, | Infineon Technologies AG | SIGC11T60NC vs SIGC06T60E |
SIGC06T60EX1SA2 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, | Infineon Technologies AG | SIGC11T60NC vs SIGC06T60EX1SA2 |