Datasheets
SIGC04T60GEX1SA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel,

Part Details for SIGC04T60GEX1SA1 by Infineon Technologies AG

Overview of SIGC04T60GEX1SA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for SIGC04T60GEX1SA1

Part # Distributor Description Stock Price Buy
DISTI # SIGC04T60GEX1SA1
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC04T60GEX1SA1) RoHS: Compliant Min Qty: 61569 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack 0
RFQ

Part Details for SIGC04T60GEX1SA1

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SIGC04T60GEX1SA1 Part Data Attributes

SIGC04T60GEX1SA1 Infineon Technologies AG
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SIGC04T60GEX1SA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel,
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 600 V
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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