Transistors
SIGC03T60SNC
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 2A I(C), 600V V(BR)CES, N-Channel, 1.78 X 1.78 MM, DIE-2

Overview of SIGC03T60SNC by Infineon Technologies AG

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for SIGC03T60SNC by Infineon Technologies AG
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Part Data Attributes for SIGC03T60SNC by Infineon Technologies AG

SIGC03T60SNC
Infineon Technologies AG
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
DIE
Package Description
UNCASED CHIP, S-XUUC-N2
Pin Count
2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Collector Current-Max (IC)
2 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Gate-Emitter Thr Voltage-Max
5 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
S-XUUC-N2
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
SQUARE
Package Style
UNCASED CHIP
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
354 ns
Turn-on Time-Nom (ton)
34 ns
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  1. SIGC03T60SNC
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 2A I(C), 600V V(BR)CES, N-Channel, 1.78 X 1.78 MM, DIE-2
    VS

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