Part Details for SIE816DF-T1-E3 by Vishay Siliconix
Overview of SIE816DF-T1-E3 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Space Technology
Internet of Things (IoT)
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Energy and Power Systems
Transportation and Logistics
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Security and Surveillance
Electronic Manufacturing
Renewable Energy
Robotics and Drones
Part Details for SIE816DF-T1-E3
SIE816DF-T1-E3 CAD Models
SIE816DF-T1-E3 Part Data Attributes:
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SIE816DF-T1-E3
Vishay Siliconix
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Datasheet
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SIE816DF-T1-E3
Vishay Siliconix
MOSFET N-CH D-S 60V POLARPAK
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | SMALL OUTLINE, R-XDSO-N4 | |
| Pin Count | 10 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 19.8 A | |
| Drain-source On Resistance-Max | 0.0074 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-N4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIE816DF-T1-E3
This table gives cross-reference parts and alternative options found for SIE816DF-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIE816DF-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIE816DF-T1-E3 | Power Field-Effect Transistor, 19.8A I(D), 60V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POLARPAK-10 | Vishay Intertechnologies | SIE816DF-T1-E3 vs SIE816DF-T1-E3 |