Part Details for SIE812DF-T1-GE3 by Vishay Siliconix
Overview of SIE812DF-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIE812DF-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIE812DF-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 40V 60A 10POLARPAK Min Qty: 1 Lead time: 99 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) |
275 In Stock |
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$1.5500 / $3.3200 | Buy Now |
Part Details for SIE812DF-T1-GE3
SIE812DF-T1-GE3 CAD Models
SIE812DF-T1-GE3 Part Data Attributes:
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SIE812DF-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIE812DF-T1-GE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, R-XDSO-N4 | |
Pin Count | 10 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0034 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIE812DF-T1-GE3
This table gives cross-reference parts and alternative options found for SIE812DF-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIE812DF-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIE812DF-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POLARPAK-10 | Vishay Intertechnologies | SIE812DF-T1-GE3 vs SIE812DF-T1-GE3 |
SIE812DF-T1-E3 | Power Field-Effect Transistor, 60A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POLARPAK-10 | Vishay Intertechnologies | SIE812DF-T1-GE3 vs SIE812DF-T1-E3 |