Part Details for SIDC50D60C6X1SA1 by Infineon Technologies AG
Results Overview of SIDC50D60C6X1SA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIDC50D60C6X1SA1 Information
SIDC50D60C6X1SA1 by Infineon Technologies AG is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for SIDC50D60C6X1SA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIDC50D60C6X1SA1
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Avnet Americas | Diode Switching 200A DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIDC50D60C6X... more RoHS: Compliant Min Qty: 89 Package Multiple: 1 Container: Waffle Pack | 0 |
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RFQ |
Part Details for SIDC50D60C6X1SA1
SIDC50D60C6X1SA1 CAD Models
SIDC50D60C6X1SA1 Part Data Attributes
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SIDC50D60C6X1SA1
Infineon Technologies AG
Buy Now
Datasheet
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SIDC50D60C6X1SA1
Infineon Technologies AG
Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, 9.20 X 5.44 MM, DIE-1
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | DIE | |
Package Description | R-XUUC-N1 | |
Pin Count | 1 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.40 | |
Application | FAST SOFT RECOVERY | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
JESD-30 Code | R-XUUC-N1 | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 1 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Output Current-Max | 200 A | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 600 V | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for SIDC50D60C6X1SA1
This table gives cross-reference parts and alternative options found for SIDC50D60C6X1SA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIDC50D60C6X1SA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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SIDC50D60C6 | Infineon Technologies AG | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, 9.20 X 5.44 MM, DIE-1 | SIDC50D60C6X1SA1 vs SIDC50D60C6 |
SIDC50D60C8X1SA2 | Infineon Technologies AG | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, DIE-1 | SIDC50D60C6X1SA1 vs SIDC50D60C8X1SA2 |
SIDC81D60E6YX1SA1 | Infineon Technologies AG | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, 9 X 9 MM, DIE-1 | SIDC50D60C6X1SA1 vs SIDC81D60E6YX1SA1 |
R62F0620ESYA | Powerex Power Semiconductors | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, R62, 2 PIN | SIDC50D60C6X1SA1 vs R62F0620ESYA |
R62S0620ESYA | Powerex Power Semiconductors | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, R62, 2 PIN | SIDC50D60C6X1SA1 vs R62S0620ESYA |
SIDC50D60C8X1SA1 | Infineon Technologies AG | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, DIE-1 | SIDC50D60C6X1SA1 vs SIDC50D60C8X1SA1 |
R72F062BSYA | Powerex Power Semiconductors | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, R72, 2 PIN | SIDC50D60C6X1SA1 vs R72F062BSYA |
SIDC81D60E6 | Infineon Technologies AG | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 200A, 600V V(RRM), Silicon, 9 X 9 MM, DIE-1 | SIDC50D60C6X1SA1 vs SIDC81D60E6 |
SIDC50D60C6X1SA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SIDC50D60C6X1SA1 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
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To ensure proper cooling, follow the thermal design guidelines provided in the datasheet. This includes providing adequate heat sinking, using thermal interface materials, and maintaining a sufficient airflow around the device. Additionally, consider using thermal simulation tools to optimize your design.
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The recommended gate drive voltage for the SIDC50D60C6X1SA1 is between 10V and 15V, as specified in the datasheet. However, it's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the SIDC50D60C6X1SA1 can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current distribution and potential damage.
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When designing a PCB layout for the SIDC50D60C6X1SA1, key considerations include minimizing parasitic inductance, ensuring proper thermal dissipation, and maintaining a low-impedance path for the high-frequency signals. It's also essential to follow the recommended layout guidelines provided in the datasheet.