Part Details for SIAA40DJ-T1-GE3 by Vishay Intertechnologies
Results Overview of SIAA40DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Transportation and Logistics
Agriculture Technology
Medical Imaging
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Aerospace and Defense
Healthcare
Renewable Energy
Robotics and Drones
SIAA40DJ-T1-GE3 Information
SIAA40DJ-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TLK106RHBR | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Price & Stock for SIAA40DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIAA40DJ-T1-GE3
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Avnet Americas | N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIAA40DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days Container: Reel | 0 |
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$0.2018 / $0.2144 | Buy Now |
|
DISTI #
78-SIAA40DJ-T1-GE3
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Mouser Electronics | MOSFETs 40V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant | 4102 |
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$0.2140 / $0.4800 | Buy Now |
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Future Electronics | N-Channel 40 V 12.5 mOhm 19.2 W TrenchFET Gen IV Mosfet - PowerPAK-SC70-6L RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel |
0 Reel |
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$0.2150 / $0.2250 | Buy Now |
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Future Electronics | N-Channel 40 V 12.5 mOhm 19.2 W TrenchFET Gen IV Mosfet - PowerPAK-SC70-6L RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks Container: Reel |
0 Reel |
|
$0.2150 / $0.2250 | Buy Now |
|
DISTI #
SIAA40DJ-T1-GE3
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TTI | MOSFETs 40V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 24000 In Stock |
|
$0.2020 / $0.2100 | Buy Now |
|
DISTI #
SIAA40DJ-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 30A, Idm: 60A Min Qty: 3000 | 0 |
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$0.4530 | RFQ |
Part Details for SIAA40DJ-T1-GE3
SIAA40DJ-T1-GE3 CAD Models
SIAA40DJ-T1-GE3 Part Data Attributes
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SIAA40DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIAA40DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SC-70, 6 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 29 Weeks | |
| Date Of Intro | 2016-09-25 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIAA40DJ-T1-GE3
This table gives cross-reference parts and alternative options found for SIAA40DJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIAA40DJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSZ165N04NSGATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 40V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-8 | SIAA40DJ-T1-GE3 vs BSZ165N04NSGATMA1 |