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Transistors / Small Signal Field-Effect Transistors / SIA913ADJ-T1-GE3
Datasheets
SIA913ADJ-T1-GE3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Small Signal Field-Effect Transistor, 4.3A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HELOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6

Part Details for SIA913ADJ-T1-GE3 by Vishay Intertechnologies

Results Overview of SIA913ADJ-T1-GE3 by Vishay Intertechnologies

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SIA913ADJ-T1-GE3 Information

SIA913ADJ-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIA913ADJ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIA913ADJ-T1-GE3
Avnet Americas Transistor MOSFET Array Dual P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA913ADJ-... T1-GE3) more RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1688
  • 6,000 $0.1661
  • 12,000 $0.1633
  • 18,000 $0.1606
  • 24,000 $0.1588
$0.1588 / $0.1688 Buy Now
DISTI # 781-SIA913ADJ-GE3
Mouser Electronics MOSFETs 12V 4.5A 6.5W 61mohm @ 4.5V RoHS: Compliant 5624
  • 1 $0.6000
  • 10 $0.4530
  • 100 $0.3100
  • 500 $0.2440
  • 1,000 $0.2230
  • 3,000 $0.1750
  • 9,000 $0.1700
  • 24,000 $0.1680
$0.1680 / $0.6000 Buy Now
Future Electronics MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks 0
  • 3,000 $0.1827
  • 6,000 $0.1804
  • 9,000 $0.1791
  • 12,000 $0.1782
  • 15,000 $0.1754
$0.1754 / $0.1827 Buy Now
DISTI # SIA913ADJ-T1-GE3
TTI MOSFETs 12V 4.5A 6.5W 61mohm @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 9000
In Stock
  • 3,000 $0.1780
  • 6,000 $0.1720
  • 9,000 $0.1680
  • 24,000 $0.1650
$0.1650 / $0.1780 Buy Now
DISTI # SIA913ADJ-T1-GE3
TME Transistor: P-MOSFET x2, TrenchFET®, unipolar, -12V, -4.5A, 6.5W Min Qty: 3000 0
  • 3,000 $0.2560
$0.2560 RFQ
DISTI # SIA913ADJ-T1-GE3
Avnet Asia Transistor MOSFET Array Dual P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA913ADJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days 0
RFQ
DISTI # SIA913ADJ-T1-GE3
EBV Elektronik Transistor MOSFET Array Dual PCH 12V 45A 6Pin PowerPAK SC70 TR (Alt: SIA913ADJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIA913ADJ-T1-GE3

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SIA913ADJ-T1-GE3 Part Data Attributes

Parametric Data
SIA913ADJ-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIA913ADJ-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.3A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HELOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HELOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.061 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-N6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 6.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

SIA913ADJ-T1-GE3 Related Parts

SIA913ADJ-T1-GE3 Frequently Asked Questions (FAQ)

  • A recommended PCB layout for optimal thermal performance would be to use a large copper area under the package, connected to a solid ground plane, and to use thermal vias to dissipate heat. Additionally, keeping the component away from other heat sources and using a thermal interface material can help improve thermal performance.

  • To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a small amount of solder paste to the pads. Use a reflow oven or a hot air gun to solder the device, and avoid applying excessive force or pressure during the soldering process.

  • Although the datasheet specifies the recommended operating conditions, it's essential to note that the maximum allowed voltage on the input pins is typically 10% to 15% above the recommended supply voltage. However, it's recommended to consult with Vishay Intertechnologies or a qualified engineer to determine the exact maximum allowed voltage for a specific application.

  • To handle ESD protection during handling and assembly, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Handle the devices by the body or the pins, avoiding direct contact with the die. Use ESD-protective packaging and follow proper handling procedures to minimize the risk of ESD damage.

  • The reliability and failure rate expectations for the SIA913ADJ-T1-GE3 are typically specified in the device's reliability report or can be obtained from Vishay Intertechnologies. The report provides information on the device's MTBF (Mean Time Between Failures), FIT (Failure In Time), and other reliability metrics. Consult with Vishay Intertechnologies or a qualified engineer to obtain the reliability report and understand the device's reliability expectations.