Part Details for SIA907EDJT-T1-GE3 by Vishay Siliconix
Overview of SIA907EDJT-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
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Price & Stock for SIA907EDJT-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIA907EDJT-T1-GE3CT-ND
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DigiKey | MOSFET 2P-CH 20V 4.5A SC70-6 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
593 In Stock |
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$0.1539 / $0.5300 | Buy Now |
Part Details for SIA907EDJT-T1-GE3
SIA907EDJT-T1-GE3 CAD Models
SIA907EDJT-T1-GE3 Part Data Attributes:
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SIA907EDJT-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIA907EDJT-T1-GE3
Vishay Siliconix
TRANSISTOR 4500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, THIN, SC-70, POWERPAK-6, FET General Purpose Small Signal
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SC-70 | |
| Package Description | SMALL OUTLINE, S-PDSO-N6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 7.8 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIA907EDJT-T1-GE3
This table gives cross-reference parts and alternative options found for SIA907EDJT-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA907EDJT-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIA907EDJT-T1-GE3 | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, THIN, SC-70, POWERPAK-6 | Vishay Intertechnologies | SIA907EDJT-T1-GE3 vs SIA907EDJT-T1-GE3 |
| SIA923AEDJ-T1-GE3 | Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | Vishay Intertechnologies | SIA907EDJT-T1-GE3 vs SIA923AEDJ-T1-GE3 |