Part Details for SIA441DJ-T1-GE3 by Vishay Siliconix
Overview of SIA441DJ-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Education and Research
Environmental Monitoring
Industrial Automation
Audio and Video Systems
Agriculture Technology
Medical Imaging
Entertainment and Gaming
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIA441DJ-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIA441DJ-T1-GE3CT-ND
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DigiKey | MOSFET P-CH 40V 12A PPAK SC70-6 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
33706 In Stock |
|
$0.1862 / $0.7300 | Buy Now |
DISTI #
70459576
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RS | MOSFET P-CH 40V 12A SC-70 | Siliconix / Vishay SIA441DJ-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$0.5600 | RFQ |
|
New Advantage Corporation | SiA441DJ Series 40 V 12 A Surface Mount P-Channel Mosfet - PowerPAK SC-70-6L RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 6000 |
|
$0.2213 / $0.2371 | Buy Now |
Part Details for SIA441DJ-T1-GE3
SIA441DJ-T1-GE3 CAD Models
SIA441DJ-T1-GE3 Part Data Attributes
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SIA441DJ-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIA441DJ-T1-GE3
Vishay Siliconix
TRANSISTOR 12 A, 40 V, 0.047 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6, FET General Purpose Power
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SC-70 | |
Package Description | SMALL OUTLINE, S-PDSO-N3 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 8.5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.047 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 19 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |