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Transistors / Power Field-Effect Transistors / SIA427ADJ-T1-GE3
Datasheets
SIA427ADJ-T1-GE3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

Part Details for SIA427ADJ-T1-GE3 by Vishay Intertechnologies

Results Overview of SIA427ADJ-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Education and Research Aerospace and Defense Communication and Networking

SIA427ADJ-T1-GE3 Information

SIA427ADJ-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIA427ADJ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 61AC1917
Newark Mosfet, P-Ch, -8V, -12A, Powerpak Sc70, Transistor Polarity:P Channel, Continuous Drain Current Id... :-12A, Drain Source Voltage Vds:-8V, On Resistance Rds(On):0.013Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-800Mv, Rohs Compliant: Yes |Vishay SIA427ADJ-T1-GE3 more RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 8755
  • 1 $0.7320
  • 10 $0.5010
  • 25 $0.4560
  • 50 $0.4120
  • 100 $0.3670
  • 250 $0.3430
  • 500 $0.3180
  • 1,000 $0.2880
$0.2880 / $0.7320 Buy Now
DISTI # 67X6796
Newark P-Channel 8-V (D-S) Mosfet |Vishay SIA427ADJ-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2120
  • 5,000 $0.2070
  • 10,000 $0.1910
  • 20,000 $0.1780
  • 30,000 $0.1660
  • 50,000 $0.1590
$0.1590 / $0.2120 Buy Now
DISTI # SIA427ADJ-T1-GE3
Avnet Americas P-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SIA427ADJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 9000
  • 3,000 $0.1410
  • 6,000 $0.1398
  • 12,000 $0.1374
  • 18,000 $0.1350
  • 24,000 $0.1326
$0.1326 / $0.1410 Buy Now
DISTI # 78-SIA427ADJ-T1-GE3
Mouser Electronics MOSFETs -8V Vds 5V Vgs PowerPAK SC-70 RoHS: Compliant 42250
  • 1 $0.6100
  • 10 $0.3860
  • 100 $0.2730
  • 500 $0.2350
  • 1,000 $0.2100
  • 3,000 $0.1550
  • 9,000 $0.1530
$0.1530 / $0.6100 Buy Now
Future Electronics SiA427ADJ Series 8 V 0.016 Ohm SMT P-Channel MOSFET - PowerPAK SC-70-6L-Single RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Container: Reel 45000
Reel
  • 3,000 $0.1580
  • 6,000 $0.1560
  • 9,000 $0.1550
  • 12,000 $0.1540
  • 15,000 $0.1520
$0.1520 / $0.1580 Buy Now
Future Electronics SiA427ADJ Series 8 V 0.016 Ohm SMT P-Channel MOSFET - PowerPAK SC-70-6L-Single RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 39000
Reel
  • 3,000 $0.1580
  • 6,000 $0.1560
  • 9,000 $0.1550
  • 12,000 $0.1540
  • 15,000 $0.1520
$0.1520 / $0.1580 Buy Now
DISTI # SIA427ADJ-T1-GE3
TTI MOSFETs -8V Vds 5V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 30000
In Stock
  • 3,000 $0.1480
  • 6,000 $0.1450
  • 9,000 $0.1420
  • 12,000 $0.1400
  • 15,000 $0.1370
  • 24,000 $0.1340
$0.1340 / $0.1480 Buy Now
DISTI # SIA427ADJ-T1-GE3
Avnet Asia P-CHANNEL 8-V (D-S) MOSFET (Alt: SIA427ADJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days 0
RFQ
DISTI # SIA427ADJ-T1-GE3
EBV Elektronik PCHANNEL 8V DS MOSFET (Alt: SIA427ADJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 21628
RFQ

Part Details for SIA427ADJ-T1-GE3

SIA427ADJ-T1-GE3 CAD Models

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SIA427ADJ-T1-GE3 Part Data Attributes

Parametric Data
SIA427ADJ-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIA427ADJ-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SO-70, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 17 Weeks
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 8 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 690 pF
JESD-30 Code S-PDSO-N3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 3.5 W
Power Dissipation-Max (Abs) 19 W
Pulsed Drain Current-Max (IDM) 50 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 165 ns
Turn-on Time-Max (ton) 60 ns

Alternate Parts for SIA427ADJ-T1-GE3

This table gives cross-reference parts and alternative options found for SIA427ADJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA427ADJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIA427DJ-T1-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 12A I(D), 8V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN SIA427ADJ-T1-GE3 vs SIA427DJ-T1-GE3
SIA427DJ-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SC-70, 6 PIN, FET General Purpose Power SIA427ADJ-T1-GE3 vs SIA427DJ-T1-GE3

SIA427ADJ-T1-GE3 Related Parts

SIA427ADJ-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended storage condition for SIA427ADJ-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.

  • While SIA427ADJ-T1-GE3 has a high operating temperature range, it's essential to consider the derating curve and thermal management to ensure reliable operation. Consult with a thermal expert or Vishay's application engineers for guidance.

  • To prevent electrostatic discharge (ESD) damage, handle SIA427ADJ-T1-GE3 components in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.

  • The recommended soldering profile for SIA427ADJ-T1-GE3 is a peak temperature of 260°C (500°F) for 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).

  • While SIA427ADJ-T1-GE3 is a high-reliability component, it's essential to consult with Vishay's automotive experts to ensure the component meets the specific requirements of your automotive application.