Datasheets
SI9936DY by:

Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for SI9936DY by Fairchild Semiconductor Corporation

Overview of SI9936DY by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for SI9936DY

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 4906
  • 1 $0.8700
  • 2,208 $0.3190
  • 4,703 $0.3045
$0.3045 / $0.8700 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 1552
  • 1 $1.4500
  • 277 $0.5800
  • 1,380 $0.5075
$0.5075 / $1.4500 Buy Now
DISTI # SMC-SI9936DY
Sensible Micro Corporation Mosfet 2N-Ch 30V 5A 8-Soic RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 612 Container: Tape & Reel 1344
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 2230
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now

Part Details for SI9936DY

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SI9936DY Part Data Attributes:

SI9936DY Fairchild Semiconductor Corporation
Buy Now Datasheet
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SI9936DY Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI9936DY

This table gives cross-reference parts and alternative options found for SI9936DY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI9936DY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI9936DYS62Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYS62Z
SI9936DYF011 Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYF011
SI9936DYL99Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYL99Z
SI9936DY,518 SI9936DY NXP Semiconductors SI9936DY vs SI9936DY,518
SI9936DYL86Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYL86Z
SI9936DYD84Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYD84Z
Part Number Description Manufacturer Compare
SI9936DYL99Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYL99Z
SI9936DYF011 Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYF011
SI9936DYD84Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYD84Z
SI9936DYS62Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYS62Z
SI9936DY,518 SI9936DY NXP Semiconductors SI9936DY vs SI9936DY,518
SI9936DYL86Z Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9936DY vs SI9936DYL86Z

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