Datasheets
SI9410BDY-T1-E3 by:

TRANSISTOR 6200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal

Part Details for SI9410BDY-T1-E3 by Vishay Siliconix

Overview of SI9410BDY-T1-E3 by Vishay Siliconix

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Part Details for SI9410BDY-T1-E3

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SI9410BDY-T1-E3 Part Data Attributes:

SI9410BDY-T1-E3 Vishay Siliconix
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SI9410BDY-T1-E3 Vishay Siliconix TRANSISTOR 6200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI9410BDY-T1-E3

This table gives cross-reference parts and alternative options found for SI9410BDY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI9410BDY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI9410BDY Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI9410BDY-T1-E3 vs SI9410BDY
SI9410BDY-T1-GE3 TRANSISTOR 6200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI9410BDY-T1-E3 vs SI9410BDY-T1-GE3
SI9410BDY-T1 Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI9410BDY-T1-E3 vs SI9410BDY-T1
SI9410BDY-T1-GE3 Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI9410BDY-T1-E3 vs SI9410BDY-T1-GE3
Part Number Description Manufacturer Compare
SI4412DYS62Z Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9410BDY-T1-E3 vs SI4412DYS62Z
SI6434DQ Small Signal Field-Effect Transistor, 5.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Vishay Intertechnologies SI9410BDY-T1-E3 vs SI6434DQ
NDS9410AL86Z Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9410BDY-T1-E3 vs NDS9410AL86Z
PHN103T/R TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET General Purpose Small Signal NXP Semiconductors SI9410BDY-T1-E3 vs PHN103T/R
FDS6612AL86Z Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9410BDY-T1-E3 vs FDS6612AL86Z
SI9410BDY-T1-E3 Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI9410BDY-T1-E3 vs SI9410BDY-T1-E3
FDS6614AL86Z Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9410BDY-T1-E3 vs FDS6614AL86Z
NDS9410AS62Z Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9410BDY-T1-E3 vs NDS9410AS62Z
SI9410DY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix SI9410BDY-T1-E3 vs SI9410DY
DMN3024LSS-13 Small Signal Field-Effect Transistor, 6.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Diodes Incorporated SI9410BDY-T1-E3 vs DMN3024LSS-13

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