Part Details for SI9407BDY-T1-E3 by Vishay Siliconix
Overview of SI9407BDY-T1-E3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI9407BDY-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI9407BDY-T1-E3CT-ND
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DigiKey | MOSFET P-CH 60V 4.7A 8SO Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
20105 In Stock |
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$0.5010 / $1.3300 | Buy Now |
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DISTI #
70459572
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RS | 60V 4.7A 5.0W 120mohm @ 10V | Siliconix / Vishay SI9407BDY-T1-E3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$1.0500 / $1.2300 | RFQ |
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New Advantage Corporation | Single P-Channel 60 V 0.15 Ohm 12 nC 2.4 W Silicon SMT Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 5000 |
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$0.4800 / $0.5143 | Buy Now |
Part Details for SI9407BDY-T1-E3
SI9407BDY-T1-E3 CAD Models
SI9407BDY-T1-E3 Part Data Attributes:
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SI9407BDY-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI9407BDY-T1-E3
Vishay Siliconix
TRANSISTOR 4700 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOIC | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 4.7 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI9407BDY-T1-E3
This table gives cross-reference parts and alternative options found for SI9407BDY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI9407BDY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDS8947/S62Z | 4000mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | SI9407BDY-T1-E3 vs NDS8947/S62Z |
| SI3446ADV-T1-E3 | Small Signal Field-Effect Transistor, 5.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | Vishay Intertechnologies | SI9407BDY-T1-E3 vs SI3446ADV-T1-E3 |
| NDS8410SD84Z | Small Signal Field-Effect Transistor, 8.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI9407BDY-T1-E3 vs NDS8410SD84Z |
| BSO065N03MSG | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8 | Infineon Technologies AG | SI9407BDY-T1-E3 vs BSO065N03MSG |
| NTMS4935NR2G | Power MOSFET 30V 16A 5.1 mOhm Single N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL | onsemi | SI9407BDY-T1-E3 vs NTMS4935NR2G |
| FDS6690AS | 30V N-Channel PowerTrench® SyncFET™ 10A, 12mΩ, 2500-REEL | onsemi | SI9407BDY-T1-E3 vs FDS6690AS |
| SI4394DY-E3 | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Vishay Siliconix | SI9407BDY-T1-E3 vs SI4394DY-E3 |
| BSO200N03S | Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8 | Infineon Technologies AG | SI9407BDY-T1-E3 vs BSO200N03S |
| NDH8502P/L99Z | 2300mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | SI9407BDY-T1-E3 vs NDH8502P/L99Z |
| FDS6690AS | 10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | Rochester Electronics LLC | SI9407BDY-T1-E3 vs FDS6690AS |