Part Details for SI8487DB-T1-E1 by Vishay Intertechnologies
Overview of SI8487DB-T1-E1 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Healthcare
Renewable Energy
Robotics and Drones
Price & Stock for SI8487DB-T1-E1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T2853
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Newark | Mosfet, P Ch, -30V, -7.7A, Micro Foot-4, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.7W Rohs Compliant: Yes |Vishay SI8487DB-T1-E1 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1970 / $0.2630 | Buy Now |
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DISTI #
94T2852
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Newark | Mosfet, P Channel, -30V, -7.7A, Micro Foot-4, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.7W Rohs Compliant: Yes |Vishay SI8487DB-T1-E1 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2570 | Buy Now |
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DISTI #
SI8487DB-T1-E1
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Avnet Americas | Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8487DB-T1-E1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.2011 / $0.2555 | Buy Now |
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DISTI #
SI8487DB-T1-E1
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Avnet Americas | Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8487DB-T1-E1) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.2011 / $0.2488 | Buy Now |
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DISTI #
78-SI8487DB-T1-E1
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Mouser Electronics | MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant | 1352 |
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$0.1910 / $0.6600 | Buy Now |
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DISTI #
E02:0323_04135095
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Arrow Electronics | Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 63 Weeks Date Code: 2347 | Europe - 3000 |
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$0.1938 / $0.2128 | Buy Now |
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Future Electronics | -30V 7.7A 0.031 Ohm P-ch MICRO FOOT 1.6 x 1.6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.1890 / $0.2050 | Buy Now |
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Future Electronics | -30V 7.7A 0.031 Ohm P-ch MICRO FOOT 1.6 x 1.6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1890 / $0.2050 | Buy Now |
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DISTI #
76834366
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Verical | Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2347 | Americas - 3000 |
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$0.1939 / $0.2131 | Buy Now |
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DISTI #
SI8487DB-T1-E1
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TTI | MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 48000 In Stock |
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$0.1930 / $0.2080 | Buy Now |
Part Details for SI8487DB-T1-E1
SI8487DB-T1-E1 CAD Models
SI8487DB-T1-E1 Part Data Attributes:
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SI8487DB-T1-E1
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI8487DB-T1-E1
Vishay Intertechnologies
Power Field-Effect Transistor, 7.7A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 330 pF | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |