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Transistors / Power Field-Effect Transistors / SI7820DN-T1-E3
Datasheets
SI7820DN-T1-E3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SI7820DN-T1-E3 by Vishay Intertechnologies

Results Overview of SI7820DN-T1-E3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI7820DN-T1-E3 Information

SI7820DN-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7820DN-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 57J5743
Newark N Ch Mosfet, 200V, 2.6A, Powerpak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200... V, Continuous Drain Current Id:2.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SI7820DN-T1-E3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.0300
  • 4,000 $0.9250
  • 6,000 $0.8920
  • 10,000 $0.8580
$0.8580 / $1.0300 Buy Now
DISTI # 09X6453
Newark Mosfet, N Channel, 200V, 1.7A, Powerpak-8, Channel Type:N Channel, Drain Source Voltage Vds:200V, ... Continuous Drain Current Id:1.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SI7820DN-T1-E3 more RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $1.2500
$1.2500 Buy Now
DISTI # SI7820DN-T1-E3
Avnet Americas Trans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7820DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.4625
$0.4625 Buy Now
DISTI # 781-SI7820DN-T1-E3
Mouser Electronics MOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 4316
  • 1 $2.0900
  • 10 $1.4400
  • 100 $1.1500
  • 500 $0.9630
  • 1,000 $0.8250
  • 3,000 $0.7840
  • 6,000 $0.7580
$0.7580 / $2.0900 Buy Now
Future Electronics Si7820DN Series 200 V 1.7 A 1.5 W N-Channel Mosfet - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.6850
$0.6850 Buy Now
Future Electronics Si7820DN Series 200 V 1.7 A 1.5 W N-Channel Mosfet - PowerPAK® 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel 0
Reel
  • 3,000 $0.6850
$0.6850 Buy Now
Bristol Electronics   7349
RFQ
DISTI # SI7820DN-T1-E3
TTI MOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 6000
In Stock
  • 3,000 $0.5730
$0.5730 Buy Now
DISTI # SI7820DN-T1-E3
EBV Elektronik Trans MOSFET NCH 200V 17A 8Pin PowerPAK 1212 TR (Alt: SI7820DN-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7820DN-T1-E3

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SI7820DN-T1-E3 Part Data Attributes

Parametric Data
SI7820DN-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7820DN-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 0.6 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 1.7 A
Drain-source On Resistance-Max 0.24 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.8 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7820DN-T1-E3

This table gives cross-reference parts and alternative options found for SI7820DN-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7820DN-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI7820DN-T1-E3 Vishay Siliconix Check for Price Trans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R SI7820DN-T1-E3 vs SI7820DN-T1-E3

SI7820DN-T1-E3 Related Parts

SI7820DN-T1-E3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7820DN-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note AN81193.

  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure that the device is operated within the recommended operating temperature range of -40°C to 150°C, and that the maximum junction temperature (Tj) is not exceeded.

  • The maximum allowed voltage on the input pins of the SI7820DN-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.

  • To protect the SI7820DN-T1-E3 from electrostatic discharge (ESD), it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging.

  • The recommended storage temperature range for the SI7820DN-T1-E3 is -40°C to 150°C. Storage outside of this range may affect the device's reliability and performance.