Datasheets
SI7806ADN-T1-E3 by:
Vishay Siliconix
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

TRANSISTOR 9 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8, FET General Purpose Power

Part Details for SI7806ADN-T1-E3 by Vishay Siliconix

Results Overview of SI7806ADN-T1-E3 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI7806ADN-T1-E3 Information

SI7806ADN-T1-E3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for SI7806ADN-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI7806ADN-T1-E3CT-ND
DigiKey MOSFET N-CH 30V 9A PPAK1212-8 Min Qty: 1 Lead time: 19 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 85
In Stock
  • 1 $2.0000
  • 10 $1.2760
  • 100 $0.8619
  • 500 $0.6845
  • 1,000 $0.6275
  • 3,000 $0.5550
  • 6,000 $0.5250
$0.5250 / $2.0000 Buy Now
DISTI # 70026280
RS N-CHANNEL 30-V (D-S) MOSFET | Siliconix / Vishay SI7806ADN-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $1.4000
  • 30,000 $1.3300
  • 150,000 $1.2600
  • 300,000 $1.1900
$1.1900 / $1.4000 RFQ
Quest Components 9 A, 30 V, 0.011 OHM, N-CHANNEL, SI, POWER, MOSFET 399
  • 1 $0.9600
  • 20 $0.5760
  • 88 $0.4480
$0.4480 / $0.9600 Buy Now

Part Details for SI7806ADN-T1-E3

SI7806ADN-T1-E3 CAD Models

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SI7806ADN-T1-E3 Part Data Attributes

SI7806ADN-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI7806ADN-T1-E3 Vishay Siliconix TRANSISTOR 9 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8, FET General Purpose Power
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Package Description SMALL OUTLINE, S-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 9.8 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.7 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7806ADN-T1-E3

This table gives cross-reference parts and alternative options found for SI7806ADN-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7806ADN-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI7806ADN-T1-E3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 9A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 SI7806ADN-T1-E3 vs SI7806ADN-T1-E3
SI7806ADN-T1-GE3 Vishay Intertechnologies $0.9870 Power Field-Effect Transistor, 9A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 SI7806ADN-T1-E3 vs SI7806ADN-T1-GE3

SI7806ADN-T1-E3 Related Parts

SI7806ADN-T1-E3 Frequently Asked Questions (FAQ)

  • A good PCB layout for the SI7806ADN-T1-E3 should include a large copper area for heat dissipation, with multiple vias to the ground plane to reduce thermal resistance. The device should be placed near a thermal pad or heat sink to maximize heat dissipation.

  • To ensure reliable operation in high-temperature environments, ensure that the device is properly derated for temperature, and that the maximum junction temperature (Tj) is not exceeded. Also, consider using a heat sink or thermal pad to reduce the device's operating temperature.

  • The recommended soldering conditions for the SI7806ADN-T1-E3 are a peak temperature of 260°C, with a soldering time of 10 seconds or less. The device should be soldered using a solder with a melting point of 180°C or higher.

  • To protect the SI7806ADN-T1-E3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded. Also, consider using ESD protection devices, such as TVS diodes, in the circuit design.

  • The SI7806ADN-T1-E3 should be stored in a dry, cool place, away from direct sunlight and moisture. The device should be handled with clean, dry gloves, and should not be exposed to mechanical stress or vibration.