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Transistors / Power Field-Effect Transistors / SI7774DP-T1-GE3
Datasheets
SI7774DP-T1-GE3 by:
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 60A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SI7774DP-T1-GE3 by Vishay Intertechnologies

Results Overview of SI7774DP-T1-GE3 by Vishay Intertechnologies

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Applications Education and Research Internet of Things (IoT) Industrial Automation Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Telecommunications Automotive Robotics and Drones

SI7774DP-T1-GE3 Information

SI7774DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for SI7774DP-T1-GE3

Part # Distributor Description Stock Price Buy
Bristol Electronics   391
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Bristol Electronics   22
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Part Details for SI7774DP-T1-GE3

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SI7774DP-T1-GE3 Part Data Attributes

Parametric Data
SI7774DP-T1-GE3 Vishay Intertechnologies
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SI7774DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 60A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7774DP-T1-GE3 Related Parts

SI7774DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad with a minimum size of 2mm x 2mm, and a thermal via array with a minimum of 5 vias, 0.3mm in diameter, spaced 0.5mm apart. Additionally, a solid copper plane on the bottom layer can help to dissipate heat.

  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. Ensure that the device is operated within the specified maximum junction temperature (Tj) of 150°C.

  • The recommended soldering profile for the SI7774DP-T1-GE3 involves a peak temperature of 260°C, with a dwell time of 10-30 seconds above 220°C. The device should be soldered using a reflow soldering process, and the soldering iron should be set to a temperature of 350°C maximum.

  • To handle ESD protection during handling and assembly, ensure that all personnel handling the device wear ESD-protective wrist straps or use ESD-protective workstations. Use ESD-protective packaging and storage materials, and avoid touching the device's pins or leads. Ground all equipment and tools to prevent static buildup.

  • The recommended storage and handling conditions for the SI7774DP-T1-GE3 involve storing the device in a dry, cool place, away from direct sunlight and moisture. The storage temperature should be between -40°C and 100°C, and the relative humidity should be below 60%. Avoid exposing the device to mechanical stress, vibration, or shock.