Part Details for SI7772DP-T1-GE3 by Vishay Siliconix
Overview of SI7772DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI7772DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7772DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 35.6A PPAK SO-8 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5880 In Stock |
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$0.2562 / $0.9300 | Buy Now |
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New Advantage Corporation | Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 15000 |
|
$0.3133 / $0.3357 | Buy Now |
Part Details for SI7772DP-T1-GE3
SI7772DP-T1-GE3 CAD Models
SI7772DP-T1-GE3 Part Data Attributes
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SI7772DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7772DP-T1-GE3
Vishay Siliconix
N-CH POWERPAK SO-8 BWL 30V 13 MOHM @ 10V W/ SCHOTTKY - Tape and Reel
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 12.9 A | |
Drain-source On Resistance-Max | 0.013 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 29.8 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI7772DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7772DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7772DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7788DP-T1-GE3 | Power Field-Effect Transistor, 29.5A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7772DP-T1-GE3 vs SI7788DP-T1-GE3 |
SI7170DP-T1-GE3 | Power Field-Effect Transistor, 28.5A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7772DP-T1-GE3 vs SI7170DP-T1-GE3 |
SIS434DN-T1-GE3 | Power Field-Effect Transistor, 17.6A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, 1212-8, POWERPAK-8 | Vishay Intertechnologies | SI7772DP-T1-GE3 vs SIS434DN-T1-GE3 |
SI5458DU-T1-GE3 | Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, CHIPFET-8 | Vishay Siliconix | SI7772DP-T1-GE3 vs SI5458DU-T1-GE3 |
SI7170DP-T1-GE3 | TRANSISTOR 28.5 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | Vishay Siliconix | SI7772DP-T1-GE3 vs SI7170DP-T1-GE3 |